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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6035KNZC17

R6035KNZC17

MOSFET N-CH 600V 35A TO3PF

Rohm Semiconductor

277 -
R6035KNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 102mOhm @ 18.1A, 10V Through Hole 5V @ 1mA 72 nC @ 10 V 600 V ±20V 3000 pF @ 25 V - - TO-3PF - 102W (Tc) 150°C (TJ)
R6035ENZC17

R6035ENZC17

MOSFET N-CH 600V 35A TO3PF

Rohm Semiconductor

266 -
R6035ENZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 102mOhm @ 18.1A, 10V Through Hole 4V @ 1mA 110 nC @ 10 V 600 V ±20V 2720 pF @ 25 V - - TO-3PF - 120W (Tc) 150°C (TJ)
R6024ENJTL

R6024ENJTL

MOSFET N-CH 600V 24A LPTS

Rohm Semiconductor

821 -
R6024ENJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Surface Mount 4V @ 1mA 70 nC @ 10 V 600 V ±20V 1650 pF @ 25 V - - LPTS - 40W (Tc) 150°C (TJ)
RP1A090ZPTR

RP1A090ZPTR

MOSFET P-CH 12V 9A MPT6

Rohm Semiconductor

3,395 -
RP1A090ZPTR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9A (Ta) 1.5V, 4.5V 12mOhm @ 9A, 4.5V Surface Mount 1V @ 1mA 59 nC @ 4.5 V 12 V ±10V 7400 pF @ 6 V - - MPT6 - 2W (Ta) 150°C (TJ)
R6015ENXC7G

R6015ENXC7G

600V 15A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

1,000 -
R6015ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 6.5A, 10V Through Hole 4V @ 1mA 40 nC @ 10 V 600 V ±20V 910 pF @ 25 V - - TO-220FM - 60W (Tc) 150°C (TJ)
R6515ENXC7G

R6515ENXC7G

650V 15A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

1,000 -
R6515ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 315mOhm @ 6.5A, 10V Through Hole 4V @ 430µA 40 nC @ 10 V 650 V ±20V 910 pF @ 25 V - - TO-220FM - 60W (Tc) 150°C (TJ)
R6030KNX

R6030KNX

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor

490 -
R6030KNX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 5V @ 1mA 56 nC @ 10 V 600 V ±20V 2350 pF @ 25 V - - TO-220FM - 86W (Tc) -55°C ~ 150°C (TJ)
R6030JNXC7G

R6030JNXC7G

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor

1,573 -
R6030JNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 15V 143mOhm @ 15A, 15V Through Hole 7V @ 5.5mA 74 nC @ 15 V 600 V ±30V 2500 pF @ 100 V - - TO-220FM - 95W (Tc) 150°C (TJ)
R6020JNZ4C13

R6020JNZ4C13

MOSFET N-CH 600V 20A TO247G

Rohm Semiconductor

355 -
R6020JNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 15V 234mOhm @ 10A, 15V Through Hole 7V @ 3.5mA 45 nC @ 15 V 600 V ±30V 1500 pF @ 100 V - - TO-247G - 252W (Tc) -55°C ~ 150°C (TJ)
R8005ANJGTL

R8005ANJGTL

NCH 800V 5A POWER MOSFET : R8005

Rohm Semiconductor

1,984 -
R8005ANJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 2.1Ohm @ 2.5A, 10V Surface Mount 5V @ 1mA 20 nC @ 10 V 800 V ±30V 500 pF @ 25 V - - TO-263S - 120W (Tc) 150°C (TJ)
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