富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RS1E350BNTB1

RS1E350BNTB1

NCH 30V 80A POWER MOSFET: RS1E35

Rohm Semiconductor

2,217 -
RS1E350BNTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 80A (Tc) 4.5V, 10V 1.7mOhm @ 35A, 10V Surface Mount 2.5V @ 1mA 185 nC @ 10 V 30 V ±20V 7900 pF @ 15 V - - 8-HSOP - 3W (Ta), 35W (Tc) 150°C (TJ)
R6524ENXC7G

R6524ENXC7G

650V 24A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

990 -
R6524ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 185mOhm @ 11.3A, 10V Through Hole 4V @ 750µA 70 nC @ 10 V 650 V ±20V 1650 pF @ 25 V - - TO-220FM - 74W (Tc) 150°C (TJ)
R6524KNXC7G

R6524KNXC7G

650V 24A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

989 -
R6524KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 185mOhm @ 11.3A, 10V Through Hole 5V @ 750µA 45 nC @ 10 V 650 V ±20V 1850 pF @ 25 V - - TO-220FM - 74W (Tc) 150°C (TJ)
R6024ENXC7G

R6024ENXC7G

600V 24A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

980 -
R6024ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 4V @ 1mA 70 nC @ 10 V 600 V ±20V 1650 pF @ 25 V - - TO-220FM - 74W (Tc) 150°C (TJ)
R6024KNXC7G

R6024KNXC7G

600V 24A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

970 -
R6024KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 5V @ 1mA 45 nC @ 10 V 600 V ±20V 2000 pF @ 25 V - - TO-220FM - 74W (Tc) 150°C (TJ)
R8002ANJFRGTL

R8002ANJFRGTL

MOSFET N-CH 800V 2A LPTS

Rohm Semiconductor

611 -
R8002ANJFRGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.3Ohm @ 1A, 10V Surface Mount 5V @ 1mA 13 nC @ 10 V 800 V ±30V 250 pF @ 25 V AEC-Q101 - LPTS Automotive 62W (Tc) 150°C (TJ)
R6030ENZC17

R6030ENZC17

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor

300 -
R6030ENZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 4V @ 1mA 85 nC @ 10 V 600 V ±20V 2100 pF @ 25 V - - TO-3PF - 120W (Tc) 150°C (TJ)
RW1C025ZPT2CR

RW1C025ZPT2CR

MOSFET P-CH 20V 2.5A 6WEMT

Rohm Semiconductor

4,852 -
RW1C025ZPT2CR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 1.5V, 4.5V 65mOhm @ 2.5A, 4.5V Surface Mount 1V @ 1mA 21 nC @ 4.5 V 20 V ±10V 1300 pF @ 10 V - - 6-WEMT - 700mW (Ta) 150°C (TJ)
RRH140P03TB1

RRH140P03TB1

MOSFET P-CH 30V 14A 8SOP

Rohm Semiconductor

13,283 -
RRH140P03TB1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 14A (Ta) 4V, 10V 7mOhm @ 14A, 10V Surface Mount 2.5V @ 1mA 80 nC @ 5 V 30 V ±20V 8000 pF @ 10 V - - 8-SOP - 650mW (Ta) 150°C (TJ)
R6511END3TL1

R6511END3TL1

650V 11A TO-252, LOW-NOISE POWER

Rohm Semiconductor

767 -
R6511END3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 400mOhm @ 3.8A, 10V Surface Mount 4V @ 320µA 32 nC @ 10 V 650 V ±20V 670 pF @ 25 V - - TO-252 - 124W (Tc) 150°C (TJ)
共 1014 条记录«上一页123456789...102下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户