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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RXH125N03TB1

RXH125N03TB1

MOSFET N-CH 30V 12.5A 8SOP

Rohm Semiconductor

5,389 -
RXH125N03TB1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12.5A (Ta) 4V, 10V 12mOhm @ 12.5A, 10V Surface Mount 2.5V @ 1mA 12.7 nC @ 5 V 30 V ±20V 1000 pF @ 10 V - - 8-SOP - 2W (Ta) 150°C (TJ)
SCT2H12NWBTL1

SCT2H12NWBTL1

SICFET N-CH 1700V 4A TO268

Rohm Semiconductor

9,309 -
SCT2H12NWBTL1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SCT2750NWCTL1

SCT2750NWCTL1

SICFET N-CH 1700V 5.9A TO268

Rohm Semiconductor

7,718 -
SCT2750NWCTL1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
R6018JNJGTL

R6018JNJGTL

MOSFET N-CH 600V 18A LPTS

Rohm Semiconductor

502 -
R6018JNJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 15V 286mOhm @ 9A, 15V Surface Mount 7V @ 4.2mA 42 nC @ 15 V 600 V ±30V 1300 pF @ 100 V - - LPTS - 220W (Tc) -55°C ~ 150°C (TJ)
R6520ENZ4C13

R6520ENZ4C13

650V 20A TO-247, LOW-NOISE POWER

Rohm Semiconductor

1,153 -
R6520ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 205mOhm @ 9.5A, 10V Through Hole 4V @ 630µA 61 nC @ 10 V 650 V ±20V 1400 pF @ 25 V - - TO-247G - 231W (Tc) 150°C (TJ)
RSJ550N10TL

RSJ550N10TL

MOSFET N-CH 100V 55A LPTS

Rohm Semiconductor

886 -
RSJ550N10TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55A (Ta) 4V, 10V 16.8mOhm @ 27.5A, 10V Surface Mount 2.5V @ 1mA 143 nC @ 10 V 100 V ±20V 6150 pF @ 25 V - - LPTS - 100W (Tc) 150°C (TJ)
RCJ331N25TL

RCJ331N25TL

250V 33A, NCH, TO-263S, POWER MO

Rohm Semiconductor

1,990 -
RCJ331N25TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 105mOhm @ 16.5A, 10V Surface Mount 5V @ 1mA 80 nC @ 10 V 250 V ±30V 4500 pF @ 25 V - - TO-263S - 1.56W (Ta), 211W (Tc) 150°C (TJ)
RCJ451N20TL

RCJ451N20TL

200V 45A, NCH, TO-263S, POWER MO

Rohm Semiconductor

986 -
RCJ451N20TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 55mOhm @ 22.5A, 10V Surface Mount 5V @ 1mA 80 nC @ 10 V 200 V ±30V 4200 pF @ 25 V - - TO-263S - 1.56W (Ta), 211W (Tc) 150°C (TJ)
RSD080N06TL

RSD080N06TL

MOSFET N-CH 60V 8A CPT3

Rohm Semiconductor

9,383 -
RSD080N06TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 8A (Ta) 4V, 10V 80mOhm @ 8A, 10V Surface Mount 2.5V @ 1mA 9.4 nC @ 10 V 60 V ±20V 380 pF @ 10 V - - CPT3 - 15W (Tc) 150°C (TJ)
R6524KNX3C16

R6524KNX3C16

650V 24A, TO-220AB, HIGH-SPEED S

Rohm Semiconductor

118 -
R6524KNX3C16

数据表

- TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 185mOhm @ 11.3A, 10V Through Hole 5V @ 750µA 45 nC @ 10 V 650 V ±20V 1850 pF @ 25 V - - TO-220AB - 253W (Tc) 150°C (TJ)
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