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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6012JNJGTL

R6012JNJGTL

MOSFET N-CH 600V 12A LPTS

Rohm Semiconductor

1,296 -
R6012JNJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 15V 390mOhm @ 6A, 15V Surface Mount 7V @ 2.5mA 28 nC @ 15 V 600 V ±30V 900 pF @ 100 V - - LPTS - 160W (Tc) -55°C ~ 150°C (TJ)
R8006KND3TL1

R8006KND3TL1

HIGH-SPEED SWITCHING NCH 800V 6A

Rohm Semiconductor

1,386 -
R8006KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 900mOhm @ 3A, 10V Surface Mount 4.5V @ 4mA 22 nC @ 10 V 800 V ±20V 650 pF @ 100 V - - TO-252 - 83W (Tc) 150°C (TJ)
RX3G18BGNC16

RX3G18BGNC16

NCH 40V 180A, TO-220AB, POWER MO

Rohm Semiconductor

2,896 -
RX3G18BGNC16

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 180A (Tc) 4.5V, 10V 1.64mOhm @ 90A, 10V Through Hole 2.5V @ 1mA 168 nC @ 10 V 40 V ±20V 12000 pF @ 20 V - - TO-220AB - 125W (Tc) 150°C (TJ)
R6018VNXC7G

R6018VNXC7G

600V 10A TO-220FM, PRESTOMOS WIT

Rohm Semiconductor

1,050 -
R6018VNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V, 15V 204mOhm @ 4A, 15V Through Hole 6.5V @ 600µA 27 nC @ 10 V 600 V ±30V 1250 pF @ 100 V - - TO-220FM - 61W (Tc) 150°C (TJ)
R6009ENX

R6009ENX

MOSFET N-CH 600V 9A TO220FM

Rohm Semiconductor

188 -
R6009ENX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 535mOhm @ 2.8A, 10V Through Hole 4V @ 1mA 23 nC @ 10 V 600 V ±20V 430 pF @ 25 V - - TO-220FM - 40W (Tc) 150°C (TJ)
RS6G120BGTB1

RS6G120BGTB1

NCH 40V 210A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,094 -
RS6G120BGTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1.34mOhm @ 90A, 10V Surface Mount 2.5V @ 1mA 67 nC @ 10 V 40 V ±20V 4240 pF @ 20 V - - 8-HSOP - 104W (Tc) 150°C (TJ)
R6030JNZC17

R6030JNZC17

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor

300 -
R6030JNZC17

数据表

- TO-3P-3 Full Pack Bag Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 15V 143mOhm @ 15A, 15V Through Hole 7V @ 5.5mA 74 nC @ 15 V 600 V ±30V 2500 pF @ 100 V - - TO-3PF - 93W (Tc) 150°C (TJ)
R8011KNXC7G

R8011KNXC7G

HIGH-SPEED SWITCHING NCH 800V 11

Rohm Semiconductor

2,172 -
R8011KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Ta) 10V 450mOhm @ 5.5A, 10V Through Hole 4.5V @ 5.5mA 37 nC @ 10 V 800 V ±20V 1200 pF @ 100 V - - TO-220FM - 65W (Tc) 150°C (TJ)
R6018JNXC7G

R6018JNXC7G

MOSFET N-CH 600V 18A TO220FM

Rohm Semiconductor

2,795 -
R6018JNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 15V 286mOhm @ 9A, 15V Through Hole 7V @ 4.2mA 42 nC @ 15 V 600 V ±30V 1300 pF @ 100 V - - TO-220FM - 72W (Tc) -55°C ~ 150°C (TJ)
R6055VNXC7G

R6055VNXC7G

600V 23A TO-220FM, PRESTOMOS WIT

Rohm Semiconductor

1,013 -
R6055VNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 23A (Tc) 10V, 15V 71mOhm @ 16A, 15V Through Hole 6.5V @ 1.5mA 80 nC @ 10 V 600 V ±30V 3700 pF @ 100 V - - TO-220FM - 100W (Tc) 150°C (TJ)
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