ROHM Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 8

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
R6009ENXC7G 600V 9A TO-220FM, LOW-NOISE POWE Rohm Semiconductor	1,000	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	10V	535mOhm @ 2.8A, 10V	Through Hole	4V @ 1mA	23 nC @ 10 V	600 V	±20V	430 pF @ 25 V	-	-	TO-220FM	-	48W (Tc)	150°C (TJ)
R6009KNXC7G 600V 9A TO-220FM, HIGH-SPEED SWI Rohm Semiconductor	547	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	10V	535mOhm @ 2.8A, 10V	Through Hole	5V @ 1mA	16.5 nC @ 10 V	600 V	±20V	540 pF @ 25 V	-	-	TO-220FM	-	48W (Tc)	150°C (TJ)
R6535KNZC17 MOSFET N-CH 650V 35A TO3 Rohm Semiconductor	280	-	询价单	数据表	-	TO-3P-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	115mOhm @ 18.1A, 10V	Through Hole	5V @ 1.21mA	72 nC @ 10 V	650 V	±20V	3000 pF @ 25 V	-	-	TO-3PF	-	102W (Tc)	150°C (TJ)
RS3L140GNGZETB NCH 60V 14A POWER MOSFET: RS3L14 Rohm Semiconductor	2,490	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	14A (Ta)	4.5V, 10V	6.5mOhm @ 14A, 10V	Surface Mount	2.7V @ 500µA	58 nC @ 10 V	60 V	±20V	2980 pF @ 30 V	-	-	8-SOP	-	1.4W (Ta)	150°C (TJ)
R6530KNXC7G 650V 30A TO-220FM, HIGH-SPEED SW Rohm Semiconductor	884	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	140mOhm @ 14.5A, 10V	Through Hole	5V @ 960µA	56 nC @ 10 V	650 V	±20V	2350 pF @ 25 V	-	-	TO-220FM	-	86W (Tc)	150°C (TJ)
R6530ENXC7G 650V 30A TO-220FM, LOW-NOISE POW Rohm Semiconductor	713	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	140mOhm @ 14.5A, 10V	Through Hole	4V @ 960µA	90 nC @ 10 V	650 V	±20V	2100 pF @ 25 V	-	-	TO-220FM	-	86W (Tc)	150°C (TJ)
RSJ301N10TL NCH 100V 30A POWER MOSFET : RSJ3 Rohm Semiconductor	466	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30A (Ta)	4V, 10V	46mOhm @ 15A, 10V	Surface Mount	2.5V @ 1mA	60 nC @ 10 V	100 V	±20V	2100 pF @ 25 V	-	-	TO-263S	-	50W (Ta)	150°C (TJ)
R6004PND3FRATL MOSFET N-CH 600V 4A TO252 Rohm Semiconductor	4,512	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	1.8Ohm @ 2A, 10V	Surface Mount	4.5V @ 1mA	11 nC @ 10 V	600 V	±25V	280 pF @ 25 V	AEC-Q101	-	TO-252	Automotive	65W (Tc)	150°C (TJ)
RS1P600BHTB1 NCH 100V 60A, HSOP8, POWER MOSFE Rohm Semiconductor	2,425	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta), 60A (Tc)	6V, 10V	8.8mOhm @ 18A, 10V	Surface Mount	4V @ 1mA	64 nC @ 10 V	100 V	±20V	4080 pF @ 50 V	-	-	8-HSOP	-	3W (Ta), 35W (Tc)	150°C (TJ)
R6530ENZ4C13 650V 30A TO-247, LOW-NOISE POWER Rohm Semiconductor	482	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	140mOhm @ 14.5A, 10V	Through Hole	4V @ 960µA	90 nC @ 10 V	650 V	±20V	2100 pF @ 25 V	-	-	TO-247G	-	305W (Tc)	150°C (TJ)

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