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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6520KNXC7G

R6520KNXC7G

650V 20A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

998 -
R6520KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 205mOhm @ 9.5A, 10V Through Hole 5V @ 630µA 40 nC @ 10 V 650 V ±20V 1550 pF @ 25 V - - TO-220FM - 68W (Tc) 150°C (TJ)
RS1E321GNTB1

RS1E321GNTB1

MOSFET N-CH 30V 32A/80A 8HSOP

Rohm Semiconductor

4,800 -
RS1E321GNTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 32A (Ta), 80A (Tc) 4.5V, 10V 2.1mOhm @ 32A, 10V Surface Mount 2.5V @ 1mA 42.8 nC @ 10 V 30 V ±20V 2850 pF @ 15 V - - 8-HSOP - 3W (Ta) 150°C (TJ)
R6515KNZC17

R6515KNZC17

MOSFET N-CH 650V 15A TO3

Rohm Semiconductor

299 -
R6515KNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 315mOhm @ 6.5A, 10V Through Hole 5V @ 430µA 27.5 nC @ 10 V 650 V ±20V 1050 pF @ 25 V - - TO-3PF - 60W (Tc) 150°C (TJ)
R6015KNZC17

R6015KNZC17

MOSFET N-CH 600V 15A TO3PF

Rohm Semiconductor

289 -
R6015KNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 6.5A, 10V Through Hole 5V @ 1mA 27.5 nC @ 10 V 600 V ±20V 1050 pF @ 25 V - - TO-3PF - 60W (Tc) 150°C (TJ)
RS6P060BHTB1

RS6P060BHTB1

NCH 100V 60A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,220 -
RS6P060BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 6V, 10V 10.6mOhm @ 60A, 10V Surface Mount 4V @ 1mA 25 nC @ 10 V 100 V ±20V 1560 pF @ 50 V - - 8-HSOP - 3W (Ta), 73W (Tc) 150°C (TJ)
R6020JNZC17

R6020JNZC17

MOSFET N-CH 600V 20A TO3PF

Rohm Semiconductor

296 -
R6020JNZC17

数据表

- TO-3P-3 Full Pack Bag Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 15V 234mOhm @ 10A, 15V Through Hole 7V @ 3.5mA 45 nC @ 15 V 600 V ±30V 1500 pF @ 100 V - - TO-3PF - 76W (Tc) 150°C (TJ)
RS6R035BHTB1

RS6R035BHTB1

NCH 150V 35A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,420 -
RS6R035BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 6V, 10V 41mOhm @ 35A, 10V Surface Mount 4V @ 1mA 25 nC @ 10 V 150 V ±20V 1470 pF @ 75 V - - 8-HSOP - 3W (Ta), 73W (Tc) 150°C (TJ)
R6009END3TL1

R6009END3TL1

MOSFET N-CH 600V 9A TO252

Rohm Semiconductor

5,016 -
R6009END3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 535mOhm @ 2.8A, 10V Surface Mount 4V @ 1mA 23 nC @ 10 V 600 V ±20V 430 pF @ 25 V - - TO-252 - 94W (Tc) 150°C (TJ)
RS1E300GNTB

RS1E300GNTB

MOSFET N-CH 30V 30A 8-HSOP

Rohm Semiconductor

7,726 -
RS1E300GNTB

数据表

- 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30A (Ta), 80A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V Surface Mount 2.5V @ 1mA 39.8 nC @ 10 V 30 V ±20V 2500 pF @ 15 V - - 8-HSOP - 3W (Ta), 33W (Tc) 150°C (TJ)
R6007ENXC7G

R6007ENXC7G

600V 7A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor

1,996 -
R6007ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7A (Ta) 10V 620mOhm @ 2.4A, 10V Through Hole 4V @ 1mA 20 nC @ 10 V 600 V ±20V 390 pF @ 25 V - - TO-220FM - 46W (Tc) 150°C (TJ)
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