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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6013VNXC7G

R6013VNXC7G

600V 8A TO-220FM, PRESTOMOS WITH

Rohm Semiconductor

1,080 -
R6013VNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V, 15V 300mOhm @ 3A, 15V Through Hole 6.5V @ 500µA 21 nC @ 10 V 600 V ±30V 900 pF @ 100 V - - TO-220FM - 54W (Tc) 150°C (TJ)
RP1L055SNTR

RP1L055SNTR

MOSFET N-CH 60V 5.5A MPT6

Rohm Semiconductor

8,226 -
RP1L055SNTR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Ta) 4V, 10V 49mOhm @ 5.5A, 10V Surface Mount 3V @ 1mA 14 nC @ 10 V 60 V ±20V 730 pF @ 10 V - - MPT6 - 2W (Ta) 150°C (TJ)
R6004JNJGTL

R6004JNJGTL

MOSFET N-CH 600V 4A LPTS

Rohm Semiconductor

993 -
R6004JNJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 15V 1.43Ohm @ 2A, 15V Surface Mount 7V @ 450µA 10.5 nC @ 15 V 600 V ±30V 260 pF @ 100 V - - LPTS - 60W (Tc) -55°C ~ 150°C (TJ)
R6509END3TL1

R6509END3TL1

650V 9A TO-252, LOW-NOISE POWER

Rohm Semiconductor

4,421 -
R6509END3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 585mOhm @ 2.8A, 10V Surface Mount 4V @ 230µA 24 nC @ 10 V 650 V ±20V 430 pF @ 25 V - - TO-252 - 94W (Tc) 150°C (TJ)
R5205PND3FRATL

R5205PND3FRATL

525V 5A TO-252, AUTOMOTIVE POWER

Rohm Semiconductor

2,277 -
R5205PND3FRATL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.6Ohm @ 2.5A, 10V Surface Mount 4.5V @ 1mA 10.8 nC @ 10 V 525 V ±30V 320 pF @ 25 V - - TO-252 - 65W (Tc) 150°C (TJ)
R6511KND3TL1

R6511KND3TL1

HIGH-SPEED SWITCHING, NCH 650V 1

Rohm Semiconductor

2,315 -
R6511KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 400mOhm @ 3.8A, 10V Surface Mount 5V @ 320µA 22 nC @ 10 V 650 V ±20V 760 pF @ 25 V - - TO-252 - 124W (Tc) 150°C (TJ)
R6006PND3FRATL

R6006PND3FRATL

600V 6A TO-252, AUTOMOTIVE POWER

Rohm Semiconductor

2,435 -
R6006PND3FRATL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1.2Ohm @ 3A, 10V Surface Mount 4.5V @ 1mA 15 nC @ 10 V 600 V ±30V 460 pF @ 25 V - - TO-252 - 87W (Tc) 150°C (TJ)
R8003KND3TL1

R8003KND3TL1

HIGH-SPEED SWITCHING NCH 800V 3A

Rohm Semiconductor

895 -
R8003KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 1.8Ohm @ 1.5A, 10V Surface Mount 4.5V @ 2mA 11.5 nC @ 10 V 800 V ±20V 300 pF @ 100 V - - TO-252 - 45W (Ta) 150°C (TJ)
R6007END3TL1

R6007END3TL1

MOSFET N-CH 600V 7A TO252

Rohm Semiconductor

2,476 -
R6007END3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 620mOhm @ 2.4A, 10V Surface Mount 4V @ 1mA 20 nC @ 10 V 600 V ±20V 390 pF @ 25 V - - TO-252 - 78W (Tc) 150°C (TJ)
R6507KNXC7G

R6507KNXC7G

650V 7A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

979 -
R6507KNXC7G

数据表

- TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Ta) 10V 665mOhm @ 2.4A, 10V Through Hole 5V @ 200µA 14.5 nC @ 10 V 650 V ±20V 470 pF @ 25 V - - TO-220FM - 46W (Tc) 150°C (TJ)
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