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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJ1G12BGNTLL

RJ1G12BGNTLL

MOSFET N-CH 40V 120A LPTL

Rohm Semiconductor

664 -
RJ1G12BGNTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1.86mOhm @ 50A, 10V Surface Mount 2.5V @ 2mA 165 nC @ 10 V 40 V ±20V 12500 pF @ 20 V - - LPTL - 178W (Tc) 150°C (TJ)
R6020KNXC7G

R6020KNXC7G

600V 20A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

769 -
R6020KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 196mOhm @ 9.5A, 10V Through Hole 5V @ 1mA 40 nC @ 10 V 600 V ±20V 1550 pF @ 25 V - - TO-220FM - 68W (Tc) 150°C (TJ)
R6024VNXC7G

R6024VNXC7G

600V 13A TO-220FM, PRESTOMOS WIT

Rohm Semiconductor

1,070 -
R6024VNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V, 15V 153mOhm @ 6A, 15V Through Hole 6.5V @ 700µA 38 nC @ 10 V 600 V ±30V 1800 pF @ 100 V - - TO-220FM - 70W (Tc) 150°C (TJ)
R8008ANJFRGTL

R8008ANJFRGTL

MOSFET N-CH 800V 8A LPTS

Rohm Semiconductor

970 -
R8008ANJFRGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.03Ohm @ 4A, 10V Surface Mount 5V @ 1mA 38 nC @ 10 V 800 V ±30V 1100 pF @ 25 V AEC-Q101 - LPTS Automotive 195W (Tc) 150°C (TJ)
R6025JNXC7G

R6025JNXC7G

MOSFET N-CH 600V 25A TO220FM

Rohm Semiconductor

1,961 -
R6025JNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 15V 182mOhm @ 12.5A, 15V Through Hole 7V @ 4.5mA 57 nC @ 15 V 600 V ±30V 1900 pF @ 100 V - - TO-220FM - 85W (Tc) -55°C ~ 150°C (TJ)
R8007AND3FRATL

R8007AND3FRATL

MOSFET N-CH 800V 7A TO252

Rohm Semiconductor

4,914 -
R8007AND3FRATL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.6Ohm @ 3.5A, 10V Surface Mount 5V @ 1mA 28 nC @ 10 V 800 V ±30V 850 pF @ 25 V AEC-Q101 - TO-252 Automotive 140W (Tc) 150°C (TJ)
RCJ700N20TL

RCJ700N20TL

MOSFET N-CH 200V 70A LPTS

Rohm Semiconductor

926 -
RCJ700N20TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 42.7mOhm @ 35A, 10V Surface Mount 5V @ 1mA 125 nC @ 10 V 200 V ±30V 6900 pF @ 25 V - - LPTS - 1.56W (Ta), 40W (Tc) 150°C (TJ)
R6024VNX3C16

R6024VNX3C16

600V 24A TO-220AB, PRESTOMOS WIT

Rohm Semiconductor

1,055 -
R6024VNX3C16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V, 15V 153mOhm @ 6A, 15V Through Hole 6.5V @ 700µA 38 nC @ 10 V 600 V ±30V 1800 pF @ 100 V - - TO-220AB - 245W (Tc) 150°C (TJ)
R6020ENZ4C13

R6020ENZ4C13

MOSFET N-CH 600V 20A TO247

Rohm Semiconductor

600 -
R6020ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 196mOhm @ 9.5A, 10V Through Hole 4V @ 1mA 60 nC @ 10 V 600 V ±20V 1400 pF @ 25 V - - TO-247 - 231W (Tc) 150°C (TJ)
R8008ANJGTL

R8008ANJGTL

NCH 800V 8A POWER MOSFET : R8008

Rohm Semiconductor

851 -
R8008ANJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.03Ohm @ 4A, 10V Surface Mount 5V @ 1mA 38 nC @ 10 V 800 V ±30V 1100 pF @ 25 V - - TO-263S - 195W (Tc) 150°C (TJ)
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