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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UPA2812T1L-E2-ATMOSFET P-CH 30V 30A 8HWSON Renesas Electronics Corporation |
7,333 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 4.8mOhm @ 30A, 10V | Surface Mount | - | 100 nC @ 10 V | 30 V | ±20V | 3740 pF @ 10 V | - | - | 8-HWSON (3.3x3.3) | - | 1.5W (Ta) | 150°C (TJ) |
|
|
UPA2813T1L-E2-ATMOSFET P-CH 30V 27A 8HWSON Renesas Electronics Corporation |
6,815 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 4.5V, 10V | 6.2mOhm @ 27A, 10V | Surface Mount | - | 80 nC @ 10 V | 30 V | ±20V | 3130 pF @ 10 V | - | - | 8-HWSON (3.3x3.3) | - | 1.5W (Ta) | 150°C (TJ) |
|
|
UPA2821T1L-E1-ATMOSFET N-CH 30V 26A 8HWSON Renesas Electronics Corporation |
2,075 | - |
|
数据表 |
- | 8-PowerWDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 26A (Tc) | 4.5V, 10V | 3.8mOhm @ 26A, 10V | Surface Mount | - | 51 nC @ 10 V | 30 V | ±20V | 2490 pF @ 10 V | - | - | 8-HWSON (3.3x3.3) | - | 1.5W (Ta) | 150°C (TJ) |
|
|
UPA2822T1L-E1-ATMOSFET N-CH 30V 34A 8HWSON Renesas Electronics Corporation |
3,934 | - |
|
数据表 |
- | 8-PowerWDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34A (Tc) | 4.5V, 10V | 2.6mOhm @ 34A, 10V | Surface Mount | - | 83 nC @ 10 V | 30 V | ±20V | 4660 pF @ 10 V | - | - | 8-HWSON (3.3x3.3) | - | 1.5W (Ta) | 150°C (TJ) |
|
|
UPA2600T1R-E2-AXMOSFET N-CH 20V 7A 6HUSON Renesas Electronics Corporation |
4,118 | - |
|
数据表 |
- | 6-WFDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Ta) | 2.5V, 4.5V | 19.1mOhm @ 3.5A, 2.5V | Surface Mount | - | 7.9 nC @ 10 V | 20 V | ±12V | 870 pF @ 10 V | - | - | 6-HUSON (2x2) | - | 2.4W (Ta) | 150°C (TJ) |
|
|
UPA2630T1R-E2-AXMOSFET P-CH 12V 7A 6HUSON Renesas Electronics Corporation |
3,822 | - |
|
数据表 |
- | 6-WFDFN Exposed Pad | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 7A (Ta) | 1.8V, 4.5V | 59mOhm @ 3.5A, 1.8V | Surface Mount | - | 11.3 nC @ 4.5 V | 12 V | ±8V | 1260 pF @ 10 V | - | - | 6-HUSON (2x2) | - | 2.5W (Ta) | 150°C (TJ) |
|
|
UPA2631T1R-E2-AXMOSFET P-CH 20V 6A 6HUSON Renesas Electronics Corporation |
4,757 | - |
|
数据表 |
- | 6-WFDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 6A (Ta) | 1.8V, 4.5V | 62mOhm @ 3A, 1.8V | Surface Mount | - | 12.5 nC @ 4.5 V | 20 V | ±8V | 1240 pF @ 10 V | - | - | 6-HUSON (2x2) | - | 2.5W (Ta) | 150°C (TJ) |
|
RQJ0303PGDQA#H6MOSFET P-CH 30V 3.3A 3MPAK Renesas Electronics Corporation |
2,321 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.3A (Ta) | 4.5V, 10V | 68mOhm @ 1.6A, 10V | Surface Mount | - | 12 nC @ 10 V | 30 V | +10V, -20V | 625 pF @ 10 V | - | - | 3-MPAK | - | 800mW (Ta) | 150°C (TJ) |
|
|
UPA2739T1A-E2-AYMOSFET P-CH 30V 85A 8HVSON Renesas Electronics Corporation |
3,333 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 85A (Ta) | 4.5V, 10V | 5.7mOhm @ 23A, 4.5V | Surface Mount | - | 153 nC @ 10 V | 30 V | ±20V | 6050 pF @ 10 V | - | - | 8-HVSON (5x5.4) | - | 1.5W (Ta) | 150°C (TJ) |
|
|
UPA2765T1A-E2-AYMOSFET N-CH 30V 100A 8HVSON Renesas Electronics Corporation |
7,705 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Ta) | 4.5V, 10V | 2.9mOhm @ 32A, 4.5V | Surface Mount | - | 152 nC @ 10 V | 30 V | ±20V | 6550 pF @ 10 V | - | - | 8-HVSON (5x5.4) | - | 1.5W (Ta), 83W (Tc) | 150°C (TJ) |
