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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK0652DPB-00#J5

RJK0652DPB-00#J5

MOSFET N-CH 60V 35A LFPAK

Renesas Electronics Corporation

5,000 -
RJK0652DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta) 4.5V, 10V 7mOhm @ 17.5A, 10V Surface Mount - 29 nC @ 4.5 V 60 V ±20V 4100 pF @ 10 V - - LFPAK - 55W (Tc) 150°C (TJ)
NP75N04YUG-E1-AY

NP75N04YUG-E1-AY

MOSFET N-CH 40V 75A 8HSON

Renesas Electronics Corporation

5,000 -
NP75N04YUG-E1-AY

数据表

- 8-SMD, Flat Lead Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4.8mOhm @ 37.5A, 10V Surface Mount 4V @ 250µA 116 nC @ 10 V 40 V ±20V 6450 pF @ 25 V - - 8-HSON - 1W (Ta), 138W (Tc) 175°C (TJ)
N0607N-ZK-E1-AY

N0607N-ZK-E1-AY

ABU / MOSFET

Renesas Electronics Corporation

8,866 -
N0607N-ZK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65A (Ta) 10V 8.4mOhm @ 32.5A, 10V Surface Mount 4V @ 1mA 58 nC @ 10 V 60 V ±20V 3300 pF @ 25 V - - TO-252 - 1W (Ta), 87.4W (Tc) 150°C
NP90N055VUK-E1-AY

NP90N055VUK-E1-AY

MOSFET N-CH 55V 90A TO252-3

Renesas Electronics Corporation

7,072 -
NP90N055VUK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 3.85mOhm @ 45A, 5V Surface Mount 4V @ 250µA 102 nC @ 10 V 55 V ±20V 6000 pF @ 25 V - - TO-252-3 - 1.2W (Ta), 147W (Tc) 175°C (TJ)
NP90N04VUK-E1-AY

NP90N04VUK-E1-AY

MOSFET N-CH 40V 90A TO252

Renesas Electronics Corporation

7,404 -
NP90N04VUK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 2.8mOhm @ 45A, 10V Surface Mount 4V @ 250µA 102 nC @ 10 V 40 V ±20V 5850 pF @ 25 V - - TO-252 - 1.2W (Ta), 147W (Tc) 175°C (TJ)
NP90N04VDK-E1-AY

NP90N04VDK-E1-AY

POWER DEVICE AUTOMOTIVE MOS MP-3

Renesas Electronics Corporation

4,293 -
NP90N04VDK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 2.8mOhm @ 45A, 10V Surface Mount 2.5V @ 250µA 102 nC @ 10 V 40 V ±20V 5850 pF @ 25 V AEC-Q101 - TO-252 (MP-3ZP) Automotive 1.2W (Ta), 147W (Tc) 175°C
RJK0655DPB-00#J5

RJK0655DPB-00#J5

MOSFET N-CH 60V 35A LFPAK

Renesas Electronics Corporation

2,500 -
RJK0655DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta) 10V 6.7mOhm @ 17.5A, 10V Surface Mount - 35 nC @ 10 V 60 V ±20V 2550 pF @ 10 V - - LFPAK - 60W (Tc) 150°C (TJ)
HAF1004-90STR-E

HAF1004-90STR-E

MOSFET P-CHANNEL 60V 5A DPAK

Renesas Electronics Corporation

3,162 -
HAF1004-90STR-E

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
RJK0455DPB-00#J5

RJK0455DPB-00#J5

MOSFET N-CH 40V 45A LFPAK

Renesas Electronics Corporation

7,490 -
RJK0455DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45A (Ta) 10V 3.8mOhm @ 22.5A, 10V Surface Mount - 34 nC @ 10 V 40 V ±20V 2550 pF @ 10 V - - LFPAK - 60W (Tc) 150°C (TJ)
RJK1001DPP-A0#T2

RJK1001DPP-A0#T2

MOSFET N-CH 100V 80A TO220FPA

Renesas Electronics Corporation

6,988 -
RJK1001DPP-A0#T2

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80A (Ta) 10V 5.5mOhm @ 40A, 10V Through Hole 4V @ 1mA 147 nC @ 10 V 100 V ±20V 10000 pF @ 10 V - - TO-220ABA - 30W (Ta) 150°C
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