富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK6012DPP-E0#T2

RJK6012DPP-E0#T2

MOSFET N-CH 600V 10A TO220FP

Renesas Electronics Corporation

2,272 -
RJK6012DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 920mOhm @ 5A, 10V Through Hole - 30 nC @ 10 V 600 V ±30V 1100 pF @ 25 V - - TO-220FP - 30W (Tc) 150°C (TJ)
RJK6013DPP-E0#T2

RJK6013DPP-E0#T2

MOSFET N-CH 600V 11A TO220FP

Renesas Electronics Corporation

9,416 -
RJK6013DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 10V 700mOhm @ 5.5A, 10V Through Hole - 37.5 nC @ 10 V 600 V ±30V 1450 pF @ 25 V - - TO-220FP - 30W (Tc) 150°C (TJ)
RJK6014DPP-E0#T2

RJK6014DPP-E0#T2

MOSFET N-CH 600V 16A TO220FP

Renesas Electronics Corporation

6,263 -
RJK6014DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 10V 575mOhm @ 8A, 10V Through Hole - 45 nC @ 10 V 600 V ±30V 1800 pF @ 25 V - - TO-220FP - 35W (Tc) 150°C (TJ)
RJK6015DPK-00#T0

RJK6015DPK-00#T0

MOSFET N-CH 600V 21A TO3P

Renesas Electronics Corporation

9,069 -
RJK6015DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 21A (Ta) 10V 360mOhm @ 10.5A, 10V Through Hole - 67 nC @ 10 V 600 V ±30V 2600 pF @ 25 V - - TO-3P - 150W (Tc) 150°C (TJ)
RJK6015DPM-00#T1

RJK6015DPM-00#T1

MOSFET N-CH 600V 21A TO3PFM

Renesas Electronics Corporation

8,554 -
RJK6015DPM-00#T1

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 21A (Ta) 10V 360mOhm @ 10.5A, 10V Through Hole - 67 nC @ 10 V 600 V ±30V 2600 pF @ 25 V - - TO-3PFM - 60W (Tc) 150°C (TJ)
RJK6018DPK-00#T0

RJK6018DPK-00#T0

MOSFET N-CH 600V 30A TO3P

Renesas Electronics Corporation

5,563 -
RJK6018DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 10V 235mOhm @ 15A, 10V Through Hole - 92 nC @ 10 V 600 V ±30V 4100 pF @ 25 V - - TO-3P - 200W (Tc) 150°C (TJ)
RJK6018DPM-00#T1

RJK6018DPM-00#T1

MOSFET N-CH 600V 30A TO3PFM

Renesas Electronics Corporation

8,156 -
RJK6018DPM-00#T1

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 10V 235mOhm @ 15A, 10V Through Hole - 92 nC @ 10 V 600 V ±30V 4100 pF @ 25 V - - TO-3PFM - 60W (Tc) 150°C (TJ)
RJK6020DPK-00#T0

RJK6020DPK-00#T0

MOSFET N-CH 600V 32A TO3P

Renesas Electronics Corporation

6,091 -
RJK6020DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 32A (Ta) 10V 175mOhm @ 16A, 10V Through Hole - 121 nC @ 10 V 600 V ±30V 5150 pF @ 25 V - - TO-3P - 200W (Tc) 150°C (TJ)
RJK6032DPH-E0#T2

RJK6032DPH-E0#T2

MOSFET N-CH 600V 3A TO251

Renesas Electronics Corporation

3,988 -
RJK6032DPH-E0#T2

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 4.3Ohm @ 1.5A, 10V Through Hole - 9 nC @ 10 V 600 V ±30V 285 pF @ 25 V - - TO-251 - 40.3W (Tc) 150°C (TJ)
RJL5012DPE-00#J3

RJL5012DPE-00#J3

MOSFET N-CH 500V 12A 4LDPAK

Renesas Electronics Corporation

7,665 -
RJL5012DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 700mOhm @ 6A, 10V Surface Mount - 27.8 nC @ 10 V 500 V ±30V 1050 pF @ 25 V - - LDPAK - 100W (Tc) 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户