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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RJL5012DPP-M0#T2MOSFET N-CH 500V 12A TO220FL Renesas Electronics Corporation |
8,365 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Ta) | 10V | 700mOhm @ 6A, 10V | Through Hole | - | 27.8 nC @ 10 V | 500 V | ±30V | 1050 pF @ 25 V | - | - | TO-220FL | - | 30W (Tc) | 150°C (TJ) |
|
RJL5014DPK-00#T0MOSFET N-CH 500V 19A TO3P Renesas Electronics Corporation |
8,827 | - |
|
数据表 |
- | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Ta) | 10V | 400mOhm @ 9.5A, 10V | Through Hole | - | 43 nC @ 10 V | 500 V | ±30V | 1700 pF @ 25 V | - | - | TO-3P | - | 150W (Tc) | 150°C (TJ) |
|
|
RJL5020DPK-00#T0MOSFET N-CH 500V 38A TO3P Renesas Electronics Corporation |
9,043 | - |
|
数据表 |
- | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 38A (Ta) | 10V | 135mOhm @ 19A, 10V | Through Hole | - | 140 nC @ 10 V | 500 V | ±30V | 4750 pF @ 25 V | - | - | TO-3P | - | 200W (Tc) | 150°C (TJ) |
|
RJL6012DPE-00#J3MOSFET N-CH 600V 10A 4LDPAK Renesas Electronics Corporation |
8,732 | - |
|
数据表 |
- | SC-83 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 10V | 1.1Ohm @ 5A, 10V | Surface Mount | - | 28 nC @ 10 V | 600 V | ±30V | 1050 pF @ 25 V | - | - | LDPAK | - | 100W (Tc) | 150°C (TJ) |
|
RJL6018DPK-00#T0MOSFET N-CH 600V 27A TO3P Renesas Electronics Corporation |
6,534 | - |
|
数据表 |
- | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Ta) | 10V | 265mOhm @ 13.5A, 10V | Through Hole | - | 98 nC @ 10 V | 600 V | ±30V | 3830 pF @ 25 V | - | - | TO-3P | - | 200W (Tc) | 150°C (TJ) |
|
|
RJL6020DPK-00#T0MOSFET N-CH 600V 30A TO3P Renesas Electronics Corporation |
4,473 | - |
|
数据表 |
- | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Ta) | 10V | 210mOhm @ 15A, 10V | Through Hole | - | 130 nC @ 10 V | 600 V | ±30V | 4750 pF @ 25 V | - | - | TO-3P | - | 200W (Tc) | 150°C (TJ) |
|
|
UPA2735GR-E1-ATMOSFET P-CH 30V 16A 8SOP Renesas Electronics Corporation |
8,763 | - |
|
数据表 |
- | 8-PowerSOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 16A (Ta) | 4.5V, 10V | 5mOhm @ 16A, 10V | Surface Mount | - | 195 nC @ 10 V | 30 V | ±20V | 6250 pF @ 10 V | - | - | 8-SOP | - | 1.1W (Ta) | 150°C (TJ) |
|
|
UPA2736GR-E1-ATMOSFET P-CH 30V 14A 8SOP Renesas Electronics Corporation |
4,396 | - |
|
数据表 |
- | 8-PowerSOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 4.5V, 10V | 7mOhm @ 14A, 10V | Surface Mount | - | 80 nC @ 10 V | 30 V | ±20V | 3400 pF @ 10 V | - | - | 8-SOP | - | 1.1W (Ta) | 150°C (TJ) |
|
UPA2737GR-E1-ATMOSFET P-CH 30V 11A 8SOP Renesas Electronics Corporation |
9,694 | - |
|
数据表 |
- | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 11A (Ta) | 4.5V, 10V | 13mOhm @ 11A, 10V | Surface Mount | - | 45 nC @ 10 V | 30 V | ±20V | 1750 pF @ 10 V | - | - | 8-SOP | - | 1.1W (Ta) | 150°C (TJ) |
|
|
UPA2738GR-E1-ATMOSFET P-CH 30V 10A 8SOP Renesas Electronics Corporation |
9,283 | - |
|
数据表 |
- | 8-PowerSOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 4.5V, 10V | 15mOhm @ 10A, 10V | Surface Mount | - | 37 nC @ 10 V | 30 V | ±20V | 1450 pF @ 10 V | - | - | 8-SOP | - | 1.1W (Ta) | 150°C (TJ) |
