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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HAT2287WP-EL-E

HAT2287WP-EL-E

MOSFET N-CH 200V 17A 8WPAK

Renesas Electronics Corporation

7,700 -
HAT2287WP-EL-E

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta) 10V 94mOhm @ 8.5A, 10V Surface Mount - 26 nC @ 10 V 200 V ±30V 1200 pF @ 25 V - - 8-WPAK (3) - 30W (Tc) 150°C (TJ)
HAT2299WP-EL-E

HAT2299WP-EL-E

MOSFET N-CH 150V 14A 8WPAK

Renesas Electronics Corporation

9,397 -
HAT2299WP-EL-E

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta) 10V 110mOhm @ 7A, 10V Surface Mount - 15 nC @ 10 V 150 V ±30V 710 pF @ 25 V - - 8-WPAK (3) - 25W (Tc) 150°C (TJ)
N0439N-S19-AY

N0439N-S19-AY

MOSFET N-CH 40V 90A TO220

Renesas Electronics Corporation

5,885 -
N0439N-S19-AY

数据表

- TO-220-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 3.3mOhm @ 45A, 10V Through Hole 4V @ 250µA 102 nC @ 10 V 40 V ±20V 5850 pF @ 25 V - - TO-220 - 1.8W (Ta), 147W (Tc) 175°C (TJ)
RJK0355DSP-01#J0

RJK0355DSP-01#J0

MOSFET N-CH 30V 12A 8SOP

Renesas Electronics Corporation

7,236 -
RJK0355DSP-01#J0

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 11.1mOhm @ 6A, 10V Surface Mount - 6 nC @ 4.5 V 30 V ±20V 860 pF @ 10 V - - 8-SOP - 1.8W (Ta) 150°C (TJ)
RJK6014DPK-00#T0

RJK6014DPK-00#T0

MOSFET N-CH 600V 16A TO3P

Renesas Electronics Corporation

8,524 -
RJK6014DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 16A (Ta) 10V 575mOhm @ 8A, 10V Through Hole - 45 nC @ 10 V 600 V ±30V 1800 pF @ 25 V - - TO-3P - 150W (Tc) 150°C (TJ)
RQK0607AQDQS#H1

RQK0607AQDQS#H1

MOSFET N-CH 60V 2.4A UPAK

Renesas Electronics Corporation

2,915 -
RQK0607AQDQS#H1

数据表

- TO-243AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Ta) 2.5V, 4.5V 270mOhm @ 1.2A, 4.5V Surface Mount - 2 nC @ 4.5 V 60 V ±12V 170 pF @ 10 V - - UPAK - 1.5W (Ta) 150°C (TJ)
UPA2812T1L-E1-AT

UPA2812T1L-E1-AT

MOSFET P-CH 30V 30A 8HVSON

Renesas Electronics Corporation

3,001 -
UPA2812T1L-E1-AT

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 4.8mOhm @ 30A, 10V Surface Mount - 100 nC @ 10 V 30 V ±20V 3740 pF @ 10 V - - 8-HVSON (3.3x3.3) - 1.5W (Ta), 52W (Tc) 150°C (TJ)
UPA2813T1L-E1-AT

UPA2813T1L-E1-AT

MOSFET P-CH 30V 27A 8HVSON

Renesas Electronics Corporation

4,260 -
UPA2813T1L-E1-AT

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 27A (Tc) - 6.2mOhm @ 27A, 10V Surface Mount - 80 nC @ 10 V 30 V - 3130 pF @ 10 V - - 8-HVSON (3.3x3.3) - 1.5W (Ta), 52W (Tc) -
UPA2820T1S-E2-AT

UPA2820T1S-E2-AT

MOSFET N-CH 30V 8HVSON

Renesas Electronics Corporation

2,298 -
UPA2820T1S-E2-AT

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 4.5V, 10V 5.3mOhm @ 22A, 10V Surface Mount - 50 nC @ 10 V 30 V ±20V 2330 pF @ 10 V - - 8-HWSON (3.3x3.3) - 1.5W (Ta), 16W (Tc) 150°C (TJ)
UPA2825T1S-E2-AT

UPA2825T1S-E2-AT

MOSFET N-CH 30V 8HVSON

Renesas Electronics Corporation

4,712 -
UPA2825T1S-E2-AT

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24A (Tc) 4.5V, 10V 4.6mOhm @ 24A, 10V Surface Mount - 57 nC @ 10 V 30 V ±20V 2600 pF @ 10 V - - 8-HWSON (3.3x3.3) - 1.5W (Ta), 16.5W (Tc) 150°C (TJ)
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