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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK5018DPK-00#T0

RJK5018DPK-00#T0

MOSFET N-CH 500V 35A TO3P

Renesas Electronics Corporation

8,095 -
RJK5018DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Ta) 10V 155mOhm @ 17.5A, 10V Through Hole - 104 nC @ 10 V 500 V ±30V 4100 pF @ 25 V - - TO-3P - 200W (Tc) 150°C (TJ)
RJK5020DPK-00#T0

RJK5020DPK-00#T0

MOSFET N-CH 500V 40A TO3P

Renesas Electronics Corporation

9,787 -
RJK5020DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40A (Ta) 10V 118mOhm @ 20A, 10V Through Hole - 126 nC @ 10 V 500 V ±30V 5150 pF @ 25 V - - TO-3P - 200W (Tc) 150°C (TJ)
RJK5026DPP-E0#T2

RJK5026DPP-E0#T2

MOSFET N-CH 500V 6A TO220FP

Renesas Electronics Corporation

6,653 -
RJK5026DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 1.7Ohm @ 3A, 10V Through Hole - 14 nC @ 10 V 500 V ±30V 440 pF @ 25 V - - TO-220FP - 28.5W (Tc) 150°C (TJ)
RJK5026DPP-M0#T2

RJK5026DPP-M0#T2

MOSFET N-CH 500V 6A TO220FL

Renesas Electronics Corporation

9,902 -
RJK5026DPP-M0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 1.7Ohm @ 3A, 10V Through Hole - 14 nC @ 10 V 500 V ±30V 440 pF @ 25 V - - TO-220FL - 28.5W (Tc) 150°C (TJ)
RJK5030DPD-00#J2

RJK5030DPD-00#J2

MOSFET N-CH 500V 5A MP3A

Renesas Electronics Corporation

3,553 -
RJK5030DPD-00#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 1.6Ohm @ 2A, 10V Surface Mount - - 500 V ±30V 550 pF @ 25 V - - MP-3A - 41.7W (Tc) 150°C (TJ)
RJK5031DPD-00#J2

RJK5031DPD-00#J2

MOSFET N-CH 500V 3A MP3A

Renesas Electronics Corporation

2,060 -
RJK5031DPD-00#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 3.2Ohm @ 1.5A, 10V Surface Mount - - 500 V ±30V 280 pF @ 25 V - - MP-3A - 40.3W (Tc) 150°C (TJ)
RJK5034DPP-E0#T2

RJK5034DPP-E0#T2

MOSFET N-CH 500V 1.2A TO220

Renesas Electronics Corporation

5,641 -
RJK5034DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Discontinued at Digi-Key - - - - - Through Hole - - - - - - - TO-220FP - - -
RJK6002DPD-00#J2

RJK6002DPD-00#J2

MOSFET N-CH 600V 2A MP3A

Renesas Electronics Corporation

4,027 -
RJK6002DPD-00#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 6.8Ohm @ 1A, 10V Surface Mount - 6.2 nC @ 10 V 600 V ±30V 165 pF @ 25 V - - MP-3A - 30W (Tc) 150°C (TJ)
RJK6011DJE-00#Z0

RJK6011DJE-00#Z0

MOSFET N-CH 600V 100MA TO92MOD

Renesas Electronics Corporation

9,213 -
RJK6011DJE-00#Z0

数据表

- TO-226-3, TO-92-3 Long Body, Formed Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Ta) 10V 52Ohm @ 50mA, 10V Through Hole - 3.7 nC @ 10 V 600 V ±30V 25 pF @ 25 V - - TO-92MOD - 900mW (Ta) 150°C (TJ)
RJK6012DPE-00#J3

RJK6012DPE-00#J3

MOSFET N-CH 600V 10A 4LDPAK

Renesas Electronics Corporation

7,982 -
RJK6012DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 920mOhm @ 5A, 10V Surface Mount - 30 nC @ 10 V 600 V ±30V 1100 pF @ 25 V - - LDPAK - 100W (Tc) 150°C (TJ)
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