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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HAT2192WP-EL-E

HAT2192WP-EL-E

MOSFET N-CH 250V 10A 8WPAK

Renesas Electronics Corporation

8,141 -
HAT2192WP-EL-E

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 230mOhm @ 5A, 10V Surface Mount - 15 nC @ 10 V 250 V ±30V 710 pF @ 25 V - - 8-WPAK (3) - 25W (Tc) 150°C (TJ)
RJK0629DPE-00#J3

RJK0629DPE-00#J3

MOSFET N-CH 60V 85A 4LDPAK

Renesas Electronics Corporation

6,135 -
RJK0629DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 85A (Ta) 4.5V, 10V 4.5mOhm @ 43A, 10V Surface Mount - 85 nC @ 10 V 60 V ±20V 4100 pF @ 10 V - - LDPAK - 100W (Tc) 150°C (TJ)
N0300N-T1B-AT

N0300N-T1B-AT

MOSFET N-CH 30V 4.5A SC96-3

Renesas Electronics Corporation

8,606 -
N0300N-T1B-AT

数据表

- SC-96 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4.5V, 10V 50mOhm @ 2A, 10V Surface Mount - - 30 V ±20V 350 pF @ 10 V - - SC-96-3, Thin Mini Mold - 1.25W (Ta) 150°C
RJK5015DPK-00#T0

RJK5015DPK-00#T0

MOSFET N-CHANNEL 500V 25A TO3P

Renesas Electronics Corporation

6,233 -
RJK5015DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 25A (Ta) 10V 240mOhm @ 12.5A, 10V Through Hole - 66 nC @ 10 V 500 V ±30V 2600 pF @ 25 V - - TO-3P - 150W (Ta) 150°C (TJ)
RJK6012DPP-A0#T2

RJK6012DPP-A0#T2

MOSFET N-CH 600V 6A TO220FP

Renesas Electronics Corporation

9,829 -
RJK6012DPP-A0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 1.37Ohm @ 3A, 10V Through Hole - 20 nC @ 10 V 600 V ±30V 765 pF @ 25 V - - TO-220FP - 29.5W (Ta) 150°C
HAT2198RWS-E

HAT2198RWS-E

IC MCU 16BIT

Renesas Electronics Corporation

4,710 -
HAT2198RWS-E

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
RJK0353DPA-WS#J0B

RJK0353DPA-WS#J0B

MOSFET N-CH 30V 35A WPAK

Renesas Electronics Corporation

5,811 -
RJK0353DPA-WS#J0B

数据表

- 8-PowerVDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 35A (Ta) 4.5V, 10V 5.2mOhm @ 17.5A, 10V Surface Mount 2.5V @ 1mA 14 nC @ 10 V 30 V ±20V 2180 pF @ 10 V - - WPAK(3F) (5x6) - 40W (Ta) 150°C
UPD703014BGC-A33-8EU-A

UPD703014BGC-A33-8EU-A

MOSFET N-CH

Renesas Electronics Corporation

4,927 -
UPD703014BGC-A33-8EU-A

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
UPD70F3417GCA-V02-UEU-X3-Q-G

UPD70F3417GCA-V02-UEU-X3-Q-G

MOSFET N-CH

Renesas Electronics Corporation

5,201 -
UPD70F3417GCA-V02-UEU-X3-Q-G

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
UPD78F0847GKA-C01-GAK-G

UPD78F0847GKA-C01-GAK-G

MOSFET N-CH

Renesas Electronics Corporation

9,225 -
UPD78F0847GKA-C01-GAK-G

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
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