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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK4512DPE-00#J3

RJK4512DPE-00#J3

MOSFET N-CH 450V 14A 4LDPAK

Renesas Electronics Corporation

3,776 -
RJK4512DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta) 10V 510mOhm @ 7A, 10V Surface Mount - 29 nC @ 10 V 450 V ±30V 1100 pF @ 25 V - - LDPAK - 100W (Tc) 150°C (TJ)
RJK4514DPK-00#T0

RJK4514DPK-00#T0

MOSFET N-CH 450V 22A TO3P

Renesas Electronics Corporation

2,006 -
RJK4514DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 22A (Ta) 10V 300mOhm @ 11A, 10V Through Hole - 46 nC @ 10 V 450 V ±30V 1800 pF @ 25 V - - TO-3P - 150W (Tc) 150°C (TJ)
RJK4518DPK-00#T0

RJK4518DPK-00#T0

MOSFET N-CH 450V 39A TO3P

Renesas Electronics Corporation

4,703 -
RJK4518DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 39A (Ta) 10V 130mOhm @ 19.5A, 10V Through Hole - 93 nC @ 10 V 450 V ±30V 4100 pF @ 25 V - - TO-3P - 200W (Tc) 150°C (TJ)
RJK4532DPD-00#J2

RJK4532DPD-00#J2

MOSFET N-CH 450V 4A MP3A

Renesas Electronics Corporation

7,497 -
RJK4532DPD-00#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 2.3Ohm @ 2A, 10V Surface Mount - 9 nC @ 10 V 450 V ±30V 280 pF @ 25 V - - MP-3A - 40.3W (Tc) 150°C (TJ)
RJK5012DPE-00#J3

RJK5012DPE-00#J3

MOSFET N-CH 500V 12A 4LDPAK

Renesas Electronics Corporation

5,376 -
RJK5012DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 620mOhm @ 6A, 10V Surface Mount - 29 nC @ 10 V 500 V ±30V 1100 pF @ 25 V - - LDPAK - 100W (Tc) 150°C (TJ)
RJK5012DPP-E0#T2

RJK5012DPP-E0#T2

MOSFET N-CH 500V 12A TO220FP

Renesas Electronics Corporation

2,388 -
RJK5012DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 620mOhm @ 6A, 10V Through Hole - 29 nC @ 10 V 500 V ±30V 1100 pF @ 25 V - - TO-220FP - 30W (Tc) 150°C (TJ)
RJK5013DPE-00#J3

RJK5013DPE-00#J3

MOSFET N-CH 500V 14A 4LDPAK

Renesas Electronics Corporation

9,816 -
RJK5013DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta) 10V 465mOhm @ 7A, 10V Surface Mount - 38 nC @ 10 V 500 V ±30V 1450 pF @ 25 V - - LDPAK - 100W (Tc) 150°C (TJ)
RJK5013DPP-E0#T2

RJK5013DPP-E0#T2

MOSFET N-CH 500V 14A TO220FP

Renesas Electronics Corporation

7,915 -
RJK5013DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 10V 465mOhm @ 7A, 10V Through Hole - 38 nC @ 10 V 500 V ±30V 1450 pF @ 25 V - - TO-220FP - 30W (Tc) 150°C (TJ)
RJK5014DPP-E0#T2

RJK5014DPP-E0#T2

MOSFET N-CH 500V 19A TO220FP

Renesas Electronics Corporation

8,128 -
RJK5014DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta) 10V 390mOhm @ 9.5A, 10V Through Hole - 46 nC @ 10 V 500 V ±30V 1800 pF @ 25 V - - TO-220FP - 35W (Tc) 150°C (TJ)
RJK5015DPM-00#T1

RJK5015DPM-00#T1

MOSFET N-CH 500V 25A TO3PFM

Renesas Electronics Corporation

6,896 -
RJK5015DPM-00#T1

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 25A (Ta) 10V 240mOhm @ 12.5A, 10V Through Hole - 66 nC @ 10 V 500 V ±30V 2600 pF @ 25 V - - TO-3PFM - 60W (Tc) 150°C (TJ)
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