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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
UPA2764T1A-E2-AY

UPA2764T1A-E2-AY

MOSFET N-CH 30V 130A 8HVSON

Renesas Electronics Corporation

2,526 -
UPA2764T1A-E2-AY

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 130A (Ta) 4.5V, 10V 2.45mOhm @ 35A, 4.5V Surface Mount - 180 nC @ 10 V 30 V ±20V 7930 pF @ 10 V - - 8-HVSON (5x5.4) - 1.5W (Ta), 83W (Tc) 150°C (TJ)
UPA2766T1A-E1-AY

UPA2766T1A-E1-AY

MOSFET N-CH 30V 130A 8HVSON

Renesas Electronics Corporation

3,514 -
UPA2766T1A-E1-AY

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 130A (Ta) 4.5V, 10V 1.82mOhm @ 39A, 4.5V Surface Mount - 257 nC @ 10 V 30 V ±20V 10850 pF @ 10 V - - 8-HVSON (5x5.4) - 1.5W (Ta), 83W (Tc) 150°C (TJ)
2SK1518-E

2SK1518-E

MOSFET N-CH 500V 20A TO3P

Renesas Electronics Corporation

2,942 -
2SK1518-E

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 270mOhm @ 10A, 10V Through Hole - - 500 V ±30V 3050 pF @ 10 V - - TO-3P - 120W (Tc) 150°C (TJ)
2SK3430-AZ

2SK3430-AZ

MOSFET N-CH 40V 80A TO220AB

Renesas Electronics Corporation

4,742 -
2SK3430-AZ

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4V, 10V 7.3mOhm @ 40A, 10V Through Hole - 50 nC @ 10 V 40 V ±20V 2800 pF @ 10 V - - TO-220AB - 1.5W (Ta), 84W (Tc) 150°C (TJ)
2SK3430-Z-E1-AZ

2SK3430-Z-E1-AZ

MOSFET N-CH 40V 80A TO220AB

Renesas Electronics Corporation

4,882 -
2SK3430-Z-E1-AZ

数据表

- TO-220-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4V, 10V 7.3mOhm @ 40A, 10V Through Hole - 50 nC @ 10 V 40 V ±20V 2800 pF @ 10 V - - TO-220AB - 1.5W (Ta), 84W (Tc) 150°C (TJ)
2SK3431-AZ

2SK3431-AZ

MOSFET N-CH 40V 83A TO220AB

Renesas Electronics Corporation

8,185 -
2SK3431-AZ

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 83A (Tc) 4V, 10V 5.6mOhm @ 42A, 10V Through Hole - 110 nC @ 10 V 40 V ±20V 6100 pF @ 10 V - - TO-220AB - 1.5W (Ta), 100W (Tc) 150°C (TJ)
2SK3431-Z-E1-AZ

2SK3431-Z-E1-AZ

MOSFET N-CH 40V 83A TO220AB

Renesas Electronics Corporation

8,280 -
2SK3431-Z-E1-AZ

数据表

- TO-220-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 83A (Tc) 4V, 10V 5.6mOhm @ 42A, 10V Through Hole - 110 nC @ 10 V 40 V ±20V 6100 pF @ 10 V - - TO-220AB - 1.5W (Ta), 100W (Tc) 150°C (TJ)
H7N1002LS-E

H7N1002LS-E

MOSFET N-CH 100V 75A 4LDPAK

Renesas Electronics Corporation

6,844 -
H7N1002LS-E

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Ta) 4.5V, 10V 10mOhm @ 37.5A, 10V Surface Mount - 155 nC @ 10 V 100 V ±20V 9700 pF @ 10 V - - LDPAK - 100W (Tc) 150°C (TJ)
H7N1002LSTL-E

H7N1002LSTL-E

MOSFET N-CH 100V 75A 4LDPAK

Renesas Electronics Corporation

7,380 -
H7N1002LSTL-E

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Ta) 4.5V, 10V 10mOhm @ 37.5A, 10V Surface Mount - 155 nC @ 10 V 100 V ±20V 9700 pF @ 10 V - - LDPAK - 100W (Tc) 150°C (TJ)
HAT2131R-EL-E

HAT2131R-EL-E

MOSFET N-CH 350V 900MA 8SOP

Renesas Electronics Corporation

6,368 -
HAT2131R-EL-E

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 900mA (Ta) 4V, 10V 3Ohm @ 450mA, 10V Surface Mount - 20 nC @ 10 V 350 V ±20V 460 pF @ 25 V - - 8-SOP - 2.5W (Ta) 150°C (TJ)
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