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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK2511DPK-00#T0

RJK2511DPK-00#T0

MOSFET N-CH 250V 65A TO3P

Renesas Electronics Corporation

2,878 -
RJK2511DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 65A (Ta) 10V 34mOhm @ 32.5A, 10V Through Hole - 120 nC @ 10 V 250 V ±30V 4900 pF @ 25 V - - TO-3P - 200W (Tc) 150°C (TJ)
RJK2555DPA-00#J0

RJK2555DPA-00#J0

MOSFET N-CH 250V 17A 8WPAK

Renesas Electronics Corporation

4,366 -
RJK2555DPA-00#J0

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta) 10V 104mOhm @ 8.5A, 10V Surface Mount - 39 nC @ 10 V 250 V ±30V 2400 pF @ 25 V - - 8-WPAK (3) - 30W (Tc) 150°C (TJ)
RJK2557DPA-00#J0

RJK2557DPA-00#J0

MOSFET N-CH 250V 17A 8WPAK

Renesas Electronics Corporation

3,195 -
RJK2557DPA-00#J0

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta) 10V 128mOhm @ 8.5A, 10V Surface Mount - 20 nC @ 10 V 250 V ±30V 1250 pF @ 25 V - - 8-WPAK (3) - 30W (Tc) 150°C (TJ)
RJK4002DJE-00#Z0

RJK4002DJE-00#Z0

MOSFET N-CH 400V 3A TO92MOD

Renesas Electronics Corporation

8,877 -
RJK4002DJE-00#Z0

数据表

- TO-226-3, TO-92-3 Long Body, Formed Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 2.9Ohm @ 1.5A, 10V Through Hole - 6 nC @ 100 V 400 V ±30V 165 pF @ 25 V - - TO-92MOD - 2.54W (Tc) 150°C (TJ)
RJK4002DPP-M0#T2

RJK4002DPP-M0#T2

MOSFET N-CH 400V 3A TO220FL

Renesas Electronics Corporation

8,802 -
RJK4002DPP-M0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 2.9Ohm @ 1.5A, 10V Through Hole - 6 nC @ 100 V 400 V ±30V 165 pF @ 25 V - - TO-220FL - 20W (Tc) 150°C (TJ)
RJK4006DPD-00#J2

RJK4006DPD-00#J2

MOSFET N-CH 400V 8A MP3A

Renesas Electronics Corporation

7,379 -
RJK4006DPD-00#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Ta) 10V 800mOhm @ 4A, 10V Surface Mount - 20 nC @ 10 V 400 V ±30V 620 pF @ 25 V - - MP-3A - 65W (Tc) 150°C (TJ)
RJK4006DPP-M0#T2

RJK4006DPP-M0#T2

MOSFET N-CH 400V 8A TO220FL

Renesas Electronics Corporation

8,491 -
RJK4006DPP-M0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8A (Ta) 10V 800mOhm @ 4A, 10V Through Hole - 20 nC @ 10 V 400 V ±30V 620 pF @ 25 V - - TO-220FL - 29W (Tc) 150°C (TJ)
RJK4007DPP-M0#T2

RJK4007DPP-M0#T2

MOSFET N-CH 400V 7.6A TO220FL

Renesas Electronics Corporation

2,318 -
RJK4007DPP-M0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7.6A (Ta) 10V 550mOhm @ 7A, 10V Through Hole - 24.5 nC @ 10 V 400 V ±30V 850 pF @ 25 V - - TO-220FL - 32W (Tc) 150°C (TJ)
RJK4013DPE-00#J3

RJK4013DPE-00#J3

MOSFET N-CH 400V 17A 4LDPAK

Renesas Electronics Corporation

8,115 -
RJK4013DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta) 10V 300mOhm @ 8.5A, 10V Surface Mount - 38 nC @ 10 V 400 V ±30V 1450 pF @ 25 V - - LDPAK - 100W (Tc) 150°C (TJ)
RJK4018DPK-00#T0

RJK4018DPK-00#T0

MOSFET N-CH 400V 43A TO3P

Renesas Electronics Corporation

7,624 -
RJK4018DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 43A (Ta) 10V 100mOhm @ 21.5A, 10V Through Hole - 99 nC @ 10 V 400 V ±30V 4100 pF @ 25 V - - TO-3P - 200W (Tc) 150°C (TJ)
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