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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK0703DPP-E0#T2

RJK0703DPP-E0#T2

MOSFET N-CH 75V 70A TO220FP

Renesas Electronics Corporation

5,706 -
RJK0703DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Ta) 10V 6.7mOhm @ 35A, 10V Through Hole - 56 nC @ 10 V 75 V ±20V 4150 pF @ 10 V - - TO-220FP - 25W (Tc) 150°C (TJ)
RJK1001DPP-E0#T2

RJK1001DPP-E0#T2

MOSFET N-CH 100V 80A TO220FP

Renesas Electronics Corporation

5,081 -
RJK1001DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Ta) 10V 5.5mOhm @ 40A, 10V Through Hole - 147 nC @ 10 V 100 V ±20V 10000 pF @ 10 V - - TO-220FP - 30W (Tc) 150°C (TJ)
RJK1002DPN-E0#T2

RJK1002DPN-E0#T2

MOSFET N-CH 100V 70A TO220AB

Renesas Electronics Corporation

6,289 -
RJK1002DPN-E0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Ta) 10V 7.6mOhm @ 35A, 10V Through Hole - 94 nC @ 10 V 100 V ±20V 6450 pF @ 10 V - - TO-220AB - 150W (Tc) 150°C (TJ)
RJK1002DPP-E0#T2

RJK1002DPP-E0#T2

MOSFET N-CH 100V 70A TO220FP

Renesas Electronics Corporation

6,204 -
RJK1002DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Ta) 10V 7.6mOhm @ 35A, 10V Through Hole - 94 nC @ 10 V 100 V ±20V 6450 pF @ 10 V - - TO-220FP - 30W (Tc) 150°C (TJ)
RJK1003DPN-E0#T2

RJK1003DPN-E0#T2

MOSFET N-CH 100V 50A TO220AB

Renesas Electronics Corporation

2,154 -
RJK1003DPN-E0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Ta) 10V 11mOhm @ 25A, 10V Through Hole - 59 nC @ 10 V 100 V ±20V 4150 pF @ 10 V - - TO-220AB - 125W (Tc) 150°C (TJ)
RJK1003DPP-E0#T2

RJK1003DPP-E0#T2

MOSFET N-CH 100V 50A TO220FP

Renesas Electronics Corporation

6,158 -
RJK1003DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Ta) 10V 11mOhm @ 25A, 10V Through Hole - 59 nC @ 10 V 100 V ±20V 4150 pF @ 10 V - - TO-220FP - 25W (Tc) 150°C (TJ)
RJK2006DPE-00#J3

RJK2006DPE-00#J3

MOSFET N-CH 200V 40A 4LDPAK

Renesas Electronics Corporation

6,327 -
RJK2006DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Ta) 10V 59mOhm @ 20A, 10V Surface Mount - 43 nC @ 10 V 200 V ±30V 1800 pF @ 25 V - - LDPAK - 100W (Tc) 150°C (TJ)
RJK2009DPM-00#T0

RJK2009DPM-00#T0

MOSFET N-CH 200V 40A TO3PFM

Renesas Electronics Corporation

3,163 -
RJK2009DPM-00#T0

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 40A (Ta) 10V 36mOhm @ 20A, 10V Through Hole - 72 nC @ 10 V 200 V ±30V 2900 pF @ 25 V - - TO-3PFM - 60W (Tc) -
RJK2057DPA-00#J0

RJK2057DPA-00#J0

MOSFET N-CH 200V 20A 8WPAK

Renesas Electronics Corporation

2,832 -
RJK2057DPA-00#J0

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 85mOhm @ 10A, 10V Surface Mount - 19 nC @ 10 V 200 V ±30V 1250 pF @ 25 V - - 8-WPAK (3) - 30W (Tc) 150°C (TJ)
RJK2508DPK-00#T0

RJK2508DPK-00#T0

MOSFET N-CH 250V 50A TO3P

Renesas Electronics Corporation

2,675 -
RJK2508DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 50A (Ta) 10V 64mOhm @ 25A, 10V Through Hole - 60 nC @ 10 V 250 V ±30V 2600 pF @ 25 V - - TO-3P - 150W (Tc) -
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