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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NP88N04KUG-E1-AY

NP88N04KUG-E1-AY

MOSFET N-CH 40V 88A TO263

Renesas Electronics Corporation

2,234 -
NP88N04KUG-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 88A (Tc) 10V 2.9mOhm @ 44A, 10V Surface Mount 4V @ 250µA 250 nC @ 10 V 40 V ±20V 15000 pF @ 25 V - - TO-263 (D2PAK) - 1.8W (Ta), 200W (Tc) 175°C (TJ)
NP89N055MUK-S18-AY

NP89N055MUK-S18-AY

MOSFET N-CH 55V 90A TO220-3

Renesas Electronics Corporation

9,950 -
NP89N055MUK-S18-AY

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 4.4mOhm @ 45A, 10V Through Hole 4V @ 250µA 102 nC @ 10 V 55 V ±20V 6000 pF @ 25 V - - TO-220-3 - 1.8W (Ta), 147W (Tc) 175°C (TJ)
NP90N03VHG-E1-AY

NP90N03VHG-E1-AY

MOSFET N-CH 30V 90A TO252

Renesas Electronics Corporation

9,048 -
NP90N03VHG-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 3.2mOhm @ 45A, 10V Surface Mount 4V @ 250µA 135 nC @ 10 V 30 V ±20V 7500 pF @ 25 V - - TO-252 - 1.2W (Ta), 105W (Tc) 175°C (TJ)
NP90N03VLG-E1-AY

NP90N03VLG-E1-AY

MOSFET N-CH 30V 90A TO252

Renesas Electronics Corporation

5,391 -
NP90N03VLG-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 3.2mOhm @ 45A, 10V Surface Mount 2.5V @ 250µA 135 nC @ 10 V 30 V ±20V 7500 pF @ 25 V - - TO-252 - 1.2W (Ta), 105W (Tc) 175°C (TJ)
NP90N04MUK-S18-AY

NP90N04MUK-S18-AY

MOSFET N-CH 40V 90A TO220

Renesas Electronics Corporation

5,811 -
NP90N04MUK-S18-AY

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 2.8mOhm @ 45A, 10V Through Hole 4V @ 250µA 120 nC @ 10 V 40 V ±20V 7050 pF @ 25 V - - TO-220 - 1.8W (Ta), 176W (Tc) 175°C (TJ)
NP90N055MUK-S18-AY

NP90N055MUK-S18-AY

MOSFET N-CH 55V 90A TO220-3

Renesas Electronics Corporation

2,881 -
NP90N055MUK-S18-AY

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 3.8mOhm @ 45A, 10V Through Hole 4V @ 250µA 120 nC @ 10 V 55 V ±20V 7350 pF @ 25 V - - TO-220-3 - 1.8W (Ta), 176W (Tc) 175°C (TJ)
RJK0601DPN-E0#T2

RJK0601DPN-E0#T2

MOSFET N-CH 60V 110A TO220AB

Renesas Electronics Corporation

2,975 -
RJK0601DPN-E0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 110A (Ta) 10V 3.1mOhm @ 55A, 10V Through Hole - 141 nC @ 10 V 60 V ±20V 10000 pF @ 10 V - - TO-220AB - 200W (Tc) 150°C (TJ)
RJK0602DPN-E0#T2

RJK0602DPN-E0#T2

MOSFET N-CH 60V 110A TO220AB

Renesas Electronics Corporation

4,232 -
RJK0602DPN-E0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 110A (Ta) 10V 3.9mOhm @ 50A, 10V Through Hole - 90 nC @ 10 V 60 V ±20V 6450 pF @ 10 V - - TO-220AB - 150W (Tc) 150°C (TJ)
RJK0603DPN-E0#T2

RJK0603DPN-E0#T2

MOSFET N-CH 60V 80A TO220AB

Renesas Electronics Corporation

2,236 -
RJK0603DPN-E0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Ta) 10V 5.2mOhm @ 40A, 10V Through Hole - 57 nC @ 10 V 60 V ±20V 4150 pF @ 10 V - - TO-220AB - 125W (Tc) 150°C (TJ)
RJK0703DPN-E0#T2

RJK0703DPN-E0#T2

MOSFET N-CH 75V 70A TO220AB

Renesas Electronics Corporation

4,482 -
RJK0703DPN-E0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Ta) 10V 6.7mOhm @ 35A, 10V Through Hole - 56 nC @ 10 V 75 V ±20V 4150 pF @ 10 V - - TO-220AB - 125W (Tc) 150°C (TJ)
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