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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2SK4151TZ-E

2SK4151TZ-E

MOSFET N-CH 150V 1A TO92

Renesas Electronics Corporation

6,437 -
2SK4151TZ-E

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1A (Ta) 2.5V, 4V 1.95Ohm @ 500mA, 4V Through Hole - 3.5 nC @ 4 V 150 V ±10V 98 pF @ 10 V - - TO-92 - 750mW (Ta) 150°C (TJ)
H5N2522LSTL-E

H5N2522LSTL-E

MOSFET N-CH 250V 20A 4LDPAK

Renesas Electronics Corporation

3,988 -
H5N2522LSTL-E

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 180mOhm @ 10A, 10V Surface Mount - 47 nC @ 10 V 250 V ±30V 1300 pF @ 25 V - - LDPAK - 75W (Tc) 150°C (TJ)
HS54095TZ-E

HS54095TZ-E

MOSFET N-CH 600V 200MA TO92-3

Renesas Electronics Corporation

6,630 -
HS54095TZ-E

数据表

- TO-226-3, TO-92-3 Short Body Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Ta) 10V 16.5Ohm @ 100mA, 10V Through Hole - 4.8 nC @ 10 V 600 V ±30V 66 pF @ 25 V - - TO-92-3 - 750mW (Ta) 150°C (TJ)
NP109N04PUG-E1-AY

NP109N04PUG-E1-AY

MOSFET N-CH 40V 110A TO263-3

Renesas Electronics Corporation

3,184 -
NP109N04PUG-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 2.3mOhm @ 55A, 10V Surface Mount 4V @ 250µA 270 nC @ 10 V 40 V ±20V 15750 pF @ 25 V - - TO-263-3 - 1.8W (Ta), 220W (Tc) 175°C (TJ)
NP110N055PUG-E1-AY

NP110N055PUG-E1-AY

MOSFET N-CH 55V 110A TO263

Renesas Electronics Corporation

2,033 -
NP110N055PUG-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 2.4mOhm @ 55A, 10V Surface Mount 4V @ 250µA 380 nC @ 10 V 55 V ±20V 25700 pF @ 25 V - - TO-263 - 1.8W (Ta), 288W (Tc) 175°C (TJ)
NP40N10PDF-E1-AY

NP40N10PDF-E1-AY

MOSFET N-CH 100V 40A TO263

Renesas Electronics Corporation

6,614 -
NP40N10PDF-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 27mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 71 nC @ 10 V 100 V ±20V 3150 pF @ 25 V - - TO-263 (D2PAK) - 1.8W (Ta), 120W (Tc) 175°C (TJ)
NP40N10YDF-E1-AY

NP40N10YDF-E1-AY

MOSFET N-CH 100V 40A 8HSON

Renesas Electronics Corporation

8,971 -
NP40N10YDF-E1-AY

数据表

- 8-PowerLDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 25mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 71 nC @ 10 V 100 V ±20V 3150 pF @ 25 V - - 8-HSON - 1W (Ta), 120W (Tc) 175°C (TJ)
NP60N04MUK-S18-AY

NP60N04MUK-S18-AY

MOSFET N-CH 40V 60A TO220

Renesas Electronics Corporation

7,014 -
NP60N04MUK-S18-AY

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 4.3mOhm @ 30A, 10V Through Hole 4V @ 250µA 63 nC @ 10 V 40 V ±20V 3680 pF @ 25 V - - TO-220 - 1.8W (Ta), 105W (Tc) 175°C (TJ)
NP60N04NUK-S18-AY

NP60N04NUK-S18-AY

MOSFET N-CH 40V 60A TO262-3

Renesas Electronics Corporation

6,156 -
NP60N04NUK-S18-AY

数据表

- TO-262-3 Full Pack, I2PAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 4.3mOhm @ 30A, 10V Through Hole 4V @ 250µA 63 nC @ 10 V 40 V ±20V 3680 pF @ 25 V - - TO-262-3 - 1.8W (Ta), 105W (Tc) 175°C (TJ)
NP82N03PUG-E1-AY

NP82N03PUG-E1-AY

MOSFET N-CH 30V 82A TO263

Renesas Electronics Corporation

7,741 -
NP82N03PUG-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 82A (Tc) 10V 2.8mOhm @ 41A, 10V Surface Mount 4V @ 250µA 160 nC @ 10 V 30 V ±20V 9080 pF @ 25 V - - TO-263 (D2PAK) - 1.8W (Ta), 143W (Tc) 175°C (TJ)
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