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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NP90N04MUG-S18-AY

NP90N04MUG-S18-AY

MOSFET N-CH 40V 90A TO220-3

Renesas Electronics Corporation

8,144 -
NP90N04MUG-S18-AY

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 3mOhm @ 45A, 10V Through Hole 4V @ 250µA 182 nC @ 10 V 40 V ±20V 11200 pF @ 25 V - - TO-220-3 - 1.8W (Ta), 217W (Tc) 175°C (TJ)
NP90N06VLG-E1-AY

NP90N06VLG-E1-AY

MOSFET N-CH 60V 90A TO252

Renesas Electronics Corporation

4,165 -
NP90N06VLG-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 7.8mOhm @ 45A, 10V Surface Mount 2.5V @ 250µA 135 nC @ 10 V 60 V ±20V 6900 pF @ 25 V - - TO-252 - 1.2W (Ta), 105W (Tc) 175°C (TJ)
RJK6024DPD-00#J2

RJK6024DPD-00#J2

MOSFET N-CH 600V 400MA MP3A

Renesas Electronics Corporation

2,394 -
RJK6024DPD-00#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 400mA (Ta) 10V 42Ohm @ 200mA, 10V Surface Mount - 4.3 nC @ 10 V 600 V ±30V 37.5 pF @ 25 V - - MP-3A - 27.2W (Tc) 150°C (TJ)
2SK1339-E

2SK1339-E

MOSFET N-CH 900V 3A TO3P

Renesas Electronics Corporation

2,929 -
2SK1339-E

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 7Ohm @ 1.5A, 10V Through Hole - - 900 V ±30V 425 pF @ 10 V - - TO-3P - 80W (Tc) 150°C (TJ)
2SK1340-E

2SK1340-E

MOSFET N-CH 900V 5A TO3P

Renesas Electronics Corporation

6,248 -
2SK1340-E

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 4Ohm @ 3A, 10V Through Hole - - 900 V ±30V 740 pF @ 10 V - - TO-3P - 100W (Tc) 150°C (TJ)
2SK1341-E

2SK1341-E

MOSFET N-CH 900V 6A TO3P

Renesas Electronics Corporation

4,455 -
2SK1341-E

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 3Ohm @ 3A, 10V Through Hole - - 900 V ±30V 980 pF @ 10 V - - TO-3P - 100W (Tc) 150°C (TJ)
2SK1342-E

2SK1342-E

MOSFET N-CH 900V 8A TO3P

Renesas Electronics Corporation

9,531 -
2SK1342-E

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 8A (Ta) 10V 1.6Ohm @ 4A, 10V Through Hole - - 900 V ±30V 1730 pF @ 10 V - - TO-3P - 100W (Tc) 150°C (TJ)
2SK1775-E

2SK1775-E

MOSFET N-CH 900V 8A TO3P

Renesas Electronics Corporation

8,289 -
2SK1775-E

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 8A (Ta) 10V 1.6Ohm @ 4A, 10V Through Hole - - 900 V ±30V 1730 pF @ 10 V - - TO-3P - 60W (Tc) 150°C (TJ)
2SK1859-E

2SK1859-E

MOSFET N-CH 900V 6A TO3P

Renesas Electronics Corporation

2,853 -
2SK1859-E

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 3Ohm @ 3A, 10V Through Hole - - 900 V ±30V 980 pF @ 10 V - - TO-3P - 60W (Tc) 150°C (TJ)
2SK4150TZ-E

2SK4150TZ-E

MOSFET N-CH 250V 400MA TO92

Renesas Electronics Corporation

3,399 -
2SK4150TZ-E

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 400mA (Ta) 2.5V, 4V 5.7Ohm @ 200mA, 4V Through Hole - 3.7 nC @ 4 V 250 V ±10V 80 pF @ 25 V - - TO-92 - 750mW (Ta) 150°C (TJ)
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