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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BUK9222-55A/C1,118

BUK9222-55A/C1,118

MOSFET N-CH 55V 48A DPAK

NXP USA Inc.

8,851 -
BUK9222-55A/C1,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 48A (Tc) 4.5V, 10V 20mOhm @ 25A, 10V Surface Mount 2V @ 1mA - 55 V ±15V 2210 pF @ 25 V - - DPAK - 103W (Tc) -55°C ~ 175°C (TJ)
BUK7210-55B/C1,118

BUK7210-55B/C1,118

MOSFET N-CH 55V 75A DPAK

NXP USA Inc.

9,369 -
BUK7210-55B/C1,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 10mOhm @ 25A, 10V Surface Mount 4V @ 1mA 35 nC @ 10 V 55 V ±20V 2453 pF @ 25 V - - DPAK - 167W (Tc) -55°C ~ 185°C (TJ)
BUK7Y35-55B,115

BUK7Y35-55B,115

MOSFET N-CH 55V 28.43A LFPAK56

NXP USA Inc.

7,566 -
BUK7Y35-55B,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 28.43A (Tc) 10V 35mOhm @ 15A, 10V Surface Mount 4V @ 1mA 13.1 nC @ 10 V 55 V ±20V 781 pF @ 25 V - - LFPAK56, Power-SO8 - 60W (Tc) -55°C ~ 175°C (TJ)
BUK654R6-55C,127

BUK654R6-55C,127

MOSFET N-CH 55V 100A TO220AB

NXP USA Inc.

9,828 -
BUK654R6-55C,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 5.4mOhm @ 25A, 10V Through Hole 2.8V @ 1mA 124 nC @ 10 V 55 V ±16V 7750 pF @ 25 V - - TO-220AB - 204W (Tc) -55°C ~ 175°C (TJ)
PSMN1R7-25YLC,115

PSMN1R7-25YLC,115

MOSFET N-CH 25V 100A LFPAK56

NXP USA Inc.

7,554 -
PSMN1R7-25YLC,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 1.9mOhm @ 25A, 10V Surface Mount 1.95V @ 1mA 59 nC @ 10 V 25 V ±20V 3735 pF @ 12 V - - LFPAK56, Power-SO8 - 164W (Tc) -55°C ~ 175°C (TJ)
PSMN3R2-25YLC,115

PSMN3R2-25YLC,115

MOSFET N-CH 25V 100A LFPAK56

NXP USA Inc.

6,454 -
PSMN3R2-25YLC,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 3.4mOhm @ 25A, 10V Surface Mount 1.95V @ 1mA 30 nC @ 10 V 25 V ±20V 1781 pF @ 12 V - - LFPAK56, Power-SO8 - 79W (Tc) -55°C ~ 175°C (TJ)
PSMN3R7-25YLC,115

PSMN3R7-25YLC,115

MOSFET N-CH 25V 97A LFPAK56

NXP USA Inc.

7,609 -
PSMN3R7-25YLC,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 97A (Tc) 4.5V, 10V 3.9mOhm @ 20A, 10V Surface Mount 1.95V @ 1mA 21.6 nC @ 10 V 25 V ±20V 1585 pF @ 12 V - - LFPAK56, Power-SO8 - 64W (Tc) -55°C ~ 175°C (TJ)
PSMN3R7-30YLC,115

PSMN3R7-30YLC,115

MOSFET N-CH 30V 100A LFPAK56

NXP USA Inc.

8,684 -
PSMN3R7-30YLC,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 3.95mOhm @ 20A, 10V Surface Mount 1.95V @ 1mA 29 nC @ 10 V 30 V ±20V 1848 pF @ 15 V - - LFPAK56, Power-SO8 - 79W (Tc) -55°C ~ 175°C (TJ)
BUK7Y08-40B/C,115

BUK7Y08-40B/C,115

MOSFET N-CH 40V 75A LFPAK56

NXP USA Inc.

2,593 -
BUK7Y08-40B/C,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 8mOhm @ 25A, 10V Surface Mount 4V @ 1mA 36.3 nC @ 10 V 40 V ±20V 2040 pF @ 25 V - - LFPAK56, Power-SO8 - 105W (Tc) -55°C ~ 175°C (TJ)
BUK7Y25-40B/C,115

BUK7Y25-40B/C,115

MOSFET N-CH 40V 35.3A LFPAK56

NXP USA Inc.

8,913 -
BUK7Y25-40B/C,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35.3A (Tc) 10V 25mOhm @ 20A, 10V Surface Mount 4V @ 1mA 12.1 nC @ 10 V 40 V ±20V 693 pF @ 25 V - - LFPAK56, Power-SO8 - 59.4W (Tc) -55°C ~ 175°C (TJ)
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