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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BUK654R8-40C,127

BUK654R8-40C,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.

1,000 -
BUK654R8-40C,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 4.8mOhm @ 25A, 10V Through Hole 2.8V @ 1mA 88 nC @ 10 V 40 V ±16V 5200 pF @ 25 V AEC-Q101 - TO-220AB Automotive 158W (Tc) -55°C ~ 175°C (TJ)
BUK754R0-55B,127

BUK754R0-55B,127

PFET, 75A I(D), 55V, 0.004OHM, 1

NXP USA Inc.

500 -
BUK754R0-55B,127

数据表

TrenchMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4mOhm @ 25A, 10V Through Hole 4V @ 1mA 86 nC @ 10 V 55 V ±20V 6776 pF @ 25 V - - TO-220AB - 300W (Tc) -55°C ~ 175°C (TJ)
BUK754R7-60E,127

BUK754R7-60E,127

MOSFET N-CH 60V 100A TO220AB

NXP USA Inc.

3,888 -
BUK754R7-60E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 4.6mOhm @ 25A, 10V Through Hole 4V @ 1mA 82 nC @ 10 V 60 V ±20V 6230 pF @ 25 V - - TO-220AB - 234W (Tc) -55°C ~ 175°C (TJ)
BUK7510-100B,127

BUK7510-100B,127

PFET, 75A I(D), 100V, 0.01OHM, 1

NXP USA Inc.

750 -
BUK7510-100B,127

数据表

TrenchMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 10mOhm @ 25A, 10V Through Hole 4V @ 1mA 80 nC @ 10 V 100 V ±20V 6773 pF @ 25 V - - TO-220AB - 300W (Tc) -55°C ~ 175°C (TJ)
BUK7E11-55B,127

BUK7E11-55B,127

MOSFET N-CH 55V 75A I2PAK

NXP USA Inc.

990 -
BUK7E11-55B,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 11mOhm @ 25A, 10V Through Hole 4V @ 1mA 37 nC @ 10 V 55 V ±20V 2604 pF @ 25 V - - I2PAK - 157W (Tc) -55°C ~ 175°C (TJ)
BUK953R2-40B,127

BUK953R2-40B,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.

1,000 -
BUK953R2-40B,127

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
BUK754R3-40B,127

BUK754R3-40B,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.

8,842 -
BUK754R3-40B,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4.3mOhm @ 25A, 10V Through Hole 4V @ 1mA 69 nC @ 10 V 40 V ±20V 4824 pF @ 25 V - - TO-220AB - 254W (Tc) -55°C ~ 175°C (TJ)
BUK7E07-55B,127

BUK7E07-55B,127

MOSFET N-CH 55V 75A I2PAK

NXP USA Inc.

6,566 -
BUK7E07-55B,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 7.1mOhm @ 25A, 10V Through Hole 4V @ 1mA 53 nC @ 10 V 55 V ±20V 3760 pF @ 25 V - - I2PAK - 203W (Tc) -55°C ~ 175°C (TJ)
BUK9E2R3-40E,127

BUK9E2R3-40E,127

MOSFET N-CH 40V 120A I2PAK

NXP USA Inc.

3,191 -
BUK9E2R3-40E,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 2.2mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 87.8 nC @ 5 V 40 V ±10V 13160 pF @ 25 V - - I2PAK - 293W (Tc) -55°C ~ 175°C (TJ)
BUK7619-100B,118

BUK7619-100B,118

MOSFET N-CH 100V 64A D2PAK

NXP USA Inc.

8,376 -
BUK7619-100B,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 64A (Tc) 10V 19mOhm @ 25A, 10V Surface Mount 4V @ 1mA 53 nC @ 10 V 100 V ±20V 3400 pF @ 25 V - - D2PAK - 200W (Tc) -55°C ~ 175°C (TJ)
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