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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PMT21EN,135

PMT21EN,135

MOSFET N-CH 30V 7.4A SOT223

NXP USA Inc.

3,180 -
PMT21EN,135

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.4A (Ta) 4.5V, 10V 21mOhm @ 7.4A, 10V Surface Mount 2.5V @ 250µA 14.4 nC @ 10 V 30 V ±20V 588 pF @ 15 V - - SC-73 - 820mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ)
PMT29EN,115

PMT29EN,115

MOSFET N-CH 30V 6A SOT223

NXP USA Inc.

5,889 -
PMT29EN,115

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 29mOhm @ 6A, 10V Surface Mount 2.5V @ 250µA 11 nC @ 10 V 30 V ±20V 492 pF @ 15 V - - SC-73 - 820mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ)
PMT29EN,135

PMT29EN,135

MOSFET N-CH 30V 6A SOT223

NXP USA Inc.

9,904 -
PMT29EN,135

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 29mOhm @ 6A, 10V Surface Mount 2.5V @ 250µA 11 nC @ 10 V 30 V ±20V 492 pF @ 15 V - - SC-73 - 820mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ)
PMV28UN,215

PMV28UN,215

MOSFET N-CH 20V 3.3A TO236AB

NXP USA Inc.

5,857 -
PMV28UN,215

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.3A (Ta) 1.8V, 4.5V 32mOhm @ 3.3A, 4.5V Surface Mount 1V @ 270µA 9 nC @ 4.5 V 20 V ±8V 470 pF @ 10 V - - SOT-23 (TO-236AB) - 380mW (Ta) -55°C ~ 150°C (TJ)
PMV30XN,215

PMV30XN,215

MOSFET N-CH 20V 3.2A TO236AB

NXP USA Inc.

5,573 -
PMV30XN,215

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.2A (Ta) 2.5V, 4.5V 35mOhm @ 3.2A, 4.5V Surface Mount 1.5V @ 250µA 7.4 nC @ 4.5 V 20 V ±12V 420 pF @ 15 V - - SOT-23 (TO-236AB) - 380mW (Ta) -55°C ~ 150°C (TJ)
PMV37EN,215

PMV37EN,215

MOSFET N-CH 30V 3.1A TO236AB

NXP USA Inc.

8,293 -
PMV37EN,215

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.1A (Ta) 4.5V, 10V 36mOhm @ 3.1A, 10V Surface Mount 2.5V @ 250µA 10 nC @ 10 V 30 V ±20V 330 pF @ 10 V - - SOT-23 (TO-236AB) - 380mW (Ta) -55°C ~ 150°C (TJ)
PSMN010-25YLC,115

PSMN010-25YLC,115

MOSFET N-CH 25V 39A LFPAK56

NXP USA Inc.

6,746 -
PSMN010-25YLC,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 39A (Tc) 4.5V, 10V 10.6mOhm @ 10A, 10V Surface Mount 1.95V @ 1mA 11 nC @ 10 V 25 V ±20V 678 pF @ 12 V - - LFPAK56, Power-SO8 - 30W (Tc) -55°C ~ 175°C (TJ)
PSMN012-25YLC,115

PSMN012-25YLC,115

MOSFET N-CH 25V 33A LFPAK56

NXP USA Inc.

6,854 -
PSMN012-25YLC,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 33A (Tc) 4.5V, 10V 12.6mOhm @ 10A, 10V Surface Mount 1.95V @ 1mA 8.3 nC @ 10 V 25 V ±20V 528 pF @ 12 V - - LFPAK56, Power-SO8 - 26W (Tc) -55°C ~ 175°C (TJ)
PSMN013-100XS,127

PSMN013-100XS,127

MOSFET N-CH 100V 35.2A TO220F

NXP USA Inc.

4,030 -
PSMN013-100XS,127

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 35.2A (Tc) 10V 13.9mOhm @ 10A, 10V Through Hole 4V @ 1mA 57.5 nC @ 10 V 100 V ±20V 3195 pF @ 50 V - - TO-220F - 48.4W (Tc) -55°C ~ 175°C (TJ)
PSMN016-100XS,127

PSMN016-100XS,127

MOSFET N-CH 100V 32.1A TO220F

NXP USA Inc.

5,588 -
PSMN016-100XS,127

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 32.1A (Tc) 10V 16mOhm @ 10A, 10V Through Hole 4V @ 1mA 46.2 nC @ 10 V 100 V ±20V 2404 pF @ 50 V - - TO-220F - 46.1W (Tc) -55°C ~ 175°C (TJ)
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