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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN5R0-100XS,127

PSMN5R0-100XS,127

MOSFET N-CH 100V 67.5A TO220F

NXP USA Inc.

2,489 -
PSMN5R0-100XS,127

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 67.5A (Tc) 10V 5mOhm @ 15A, 10V Through Hole 4V @ 1mA 153 nC @ 10 V 100 V ±20V 9900 pF @ 50 V - - TO-220F - 63.8W (Tc) -
PSMN5R6-100XS,127

PSMN5R6-100XS,127

MOSFET N-CH 100V 61.8A TO220F

NXP USA Inc.

8,896 -
PSMN5R6-100XS,127

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 61.8A (Tc) 10V 5.6mOhm @ 15A, 10V Through Hole 4V @ 1mA 145 nC @ 10 V 100 V ±20V 8061 pF @ 50 V - - TO-220F - 60W (Tc) -55°C ~ 175°C (TJ)
PSMN7R0-100XS,127

PSMN7R0-100XS,127

MOSFET N-CH 100V 55A TO220F

NXP USA Inc.

3,012 -
PSMN7R0-100XS,127

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 6.8mOhm @ 15A, 10V Through Hole 4V @ 1mA 121 nC @ 10 V 100 V ±20V 6686 pF @ 50 V - - TO-220F - 57.7W (Tc) -55°C ~ 175°C (TJ)
PMV62XN,215

PMV62XN,215

MOSFET N-CH SOT-23

NXP USA Inc.

3,742 -
PMV62XN,215

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
PMV65UN,215

PMV65UN,215

MOSFET N-CH 20V 2.2A TO236AB

NXP USA Inc.

5,308 -
PMV65UN,215

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.2A (Ta) 1.8V, 4.5V 76mOhm @ 2A, 4.5V Surface Mount 1V @ 250µA 3.9 nC @ 4.5 V 20 V ±8V 183 pF @ 10 V - - SOT-23 (TO-236AB) - 310mW (Ta), 2.17W (Tc) -55°C ~ 150°C (TJ)
PSMN023-40YLCX

PSMN023-40YLCX

MOSFET N-CH 40V 24A LFPAK56

NXP USA Inc.

2,815 -
PSMN023-40YLCX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24A (Tc) 4.5V, 10V 23mOhm @ 5A, 10V Surface Mount 1.95V @ 1mA 8.4 nC @ 10 V 40 V ±20V 520 pF @ 20 V - - LFPAK56, Power-SO8 - 25W (Tc) -55°C ~ 175°C (TJ)
BUK7514-60E,127

BUK7514-60E,127

MOSFET N-CH 60V 58A TO220AB

NXP USA Inc.

2,557 -
BUK7514-60E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 58A (Tc) 10V 13mOhm @ 15A, 10V Through Hole 4V @ 1mA 22.9 nC @ 10 V 60 V ±20V 1730 pF @ 25 V - - TO-220AB - 96W (Tc) -55°C ~ 175°C (TJ)
BUK753R5-60E,127

BUK753R5-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.

7,759 -
BUK753R5-60E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.5mOhm @ 25A, 10V Through Hole 4V @ 1mA 114 nC @ 10 V 60 V ±20V 8920 pF @ 25 V - - TO-220AB - 293W (Tc) -55°C ~ 175°C (TJ)
BUK9515-60E,127

BUK9515-60E,127

MOSFET N-CH 60V 54A TO220AB

NXP USA Inc.

3,398 -
BUK9515-60E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 54A (Tc) 5V, 10V 13mOhm @ 15A, 10V Through Hole 2.1V @ 1mA 20.5 nC @ 5 V 60 V ±10V 2651 pF @ 25 V - - TO-220AB - 96W (Tc) -55°C ~ 175°C (TJ)
BUK951R6-30E,127

BUK951R6-30E,127

MOSFET N-CH 30V 120A TO220AB

NXP USA Inc.

6,511 -
BUK951R6-30E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 1.4mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 113 nC @ 5 V 30 V ±10V 16150 pF @ 25 V - - TO-220AB - 349W (Tc) -55°C ~ 175°C (TJ)
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