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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2N7002T,215MOSFET N-CH 60V 300MA TO236AB NXP USA Inc. |
7,132 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | Surface Mount | 2.5V @ 1mA | - | 60 V | ±20V | 40 pF @ 10 V | - | - | SOT-23 (TO-236AB) | - | 830mW (Ta) | -55°C ~ 150°C (TJ) |
|
PSMN9R0-30YL,115MOSFET N-CH 30V 61A LFPAK56 NXP USA Inc. |
5,325 | - |
|
数据表 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 61A (Tc) | 4.5V, 10V | 8mOhm @ 15A, 10V | Surface Mount | 2.15V @ 1mA | 17.8 nC @ 10 V | 30 V | ±20V | 1006 pF @ 12 V | - | - | LFPAK56, Power-SO8 | - | 46W (Tc) | -55°C ~ 175°C (TJ) |
|
|
PH1875L,115MOSFET N-CH 75V 45.8A LFPAK56 NXP USA Inc. |
6,182 | - |
|
数据表 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 45.8A (Tc) | 4.5V, 10V | 16.5mOhm @ 20A, 10V | Surface Mount | 2V @ 1mA | 33.4 nC @ 5 V | 75 V | ±15V | 2600 pF @ 25 V | - | - | LFPAK56, Power-SO8 | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
PHD77NQ03T,118MOSFET N-CH 25V 75A DPAK NXP USA Inc. |
6,406 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 9.5mOhm @ 25A, 10V | Surface Mount | 3.2V @ 1mA | 17.1 nC @ 10 V | 25 V | ±20V | 860 pF @ 12 V | - | - | DPAK | - | 107W (Tc) | -55°C ~ 175°C (TJ) |
|
BUK662R5-30C,118NEXPERIA BUK662R5-30C - 100A, 30 NXP Semiconductors |
927 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 2.8mOhm @ 25A, 10V | Surface Mount | 2.8V @ 1mA | 114 nC @ 10 V | 30 V | ±16V | 6960 pF @ 25 V | AEC-Q101 | - | D2PAK | Automotive | 204W (Tc) | -55°C ~ 175°C (TJ) |
|
|
BUK663R2-40C,118NEXPERIA BUK663R2-40C - 100A, 40 NXP Semiconductors |
724 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 3.2mOhm @ 25A, 10V | Surface Mount | 2.8V @ 1mA | 125 nC @ 10 V | 40 V | ±16V | 8020 pF @ 25 V | AEC-Q101 | - | D2PAK | Automotive | 204W (Tc) | -55°C ~ 175°C (TJ) |
|
PSMN8R5-100ESFQNEXPERIA PSMN8R5 - NEXTPOWER 100 NXP Semiconductors |
1,000 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 97A (Ta) | 7V, 10V | 8.8mOhm @ 25A, 10V | Through Hole | 4V @ 1mA | 44.5 nC @ 10 V | 100 V | ±20V | 3181 pF @ 50 V | - | - | I2PAK | - | 183W (Ta) | -55°C ~ 175°C (TJ) |
|
BUK752R3-40E,127NEXPERIA BUK752R3-40E - 120A, 40 NXP Semiconductors |
995 | - |
|
数据表 |
TrenchMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Ta) | - | 2.3mOhm @ 25A, 10V | Through Hole | 4V @ 1mA | 109.2 nC @ 10 V | 40 V | ±20V | 8500 pF @ 25 V | AEC-Q101 | - | TO-220AB | Automotive | 293W (Ta) | -55°C ~ 175°C (TJ) |
|
BUK7606-55A,118MOSFET N-CH 55V 75A D2PAK NXP USA Inc. |
800 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 6.3mOhm @ 25A, 10V | Surface Mount | 4V @ 1mA | - | 55 V | ±20V | 6000 pF @ 25 V | AEC-Q101 | - | D2PAK | Automotive | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
BUK769R6-80E,118NEXPERIA BUK769R6-80E - 75A, 80V NXP Semiconductors |
341 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 9.6mOhm @ 20A, 10V | Surface Mount | 4V @ 1mA | 59.8 nC @ 10 V | 80 V | ±20V | 4682 pF @ 25 V | AEC-Q101 | - | D2PAK | Automotive | 182W (Tc) | -55°C ~ 175°C (TJ) |
