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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF640,127MOSFET N-CH 200V 16A TO220AB NXP USA Inc. |
9,601 | - |
|
数据表 |
TrenchMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 180mOhm @ 8A, 10V | Through Hole | 4V @ 1mA | 63 nC @ 10 V | 200 V | ±20V | 1850 pF @ 25 V | - | - | TO-220AB | - | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
BUK6212-40C,118NEXPERIA BUK6212-40C - 50A, 40V, NXP Semiconductors |
5,239 | - |
|
数据表 |
TrenchMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Ta) | - | 11.2mOhm @ 12A, 10V | Surface Mount | 2.8V @ 1mA | 33.9 nC @ 10 V | 40 V | ±16V | 1900 pF @ 25 V | AEC-Q101 | - | DPAK | Automotive | 80W | -55°C ~ 175°C (TJ) |
|
PSMN017-30EL,127PSMN017-30EL - N-CHANNEL 30V LO NXP Semiconductors |
7,475 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 32A (Ta) | 4.5V, 10V | 17mOhm @ 10A, 10V | Through Hole | 2.15V @ 1mA | 10.7 nC @ 10 V | 30 V | ±20V | 552 pF @ 15 V | - | - | I2PAK | - | 47W (Ta) | -55°C ~ 175°C (TJ) |
|
BUK9540-100A,127NEXPERIA BUK9540 - N-CHANNEL MOS NXP Semiconductors |
2,000 | - |
|
数据表 |
TrenchMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 39A (Tc) | 4.5V, 10V | 39mOhm @ 25A, 10V | Through Hole | 2V @ 1mA | 48 nC @ 5 V | 100 V | ±15V | 3072 pF @ 25 V | - | - | TO-220AB | - | 158W (Tc) | -55°C ~ 175°C (TJ) |
|
PSMN018-100ESFQNEXPERIA PSMN018 - NEXTPOWER 100 NXP Semiconductors |
4,976 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 53A (Ta) | 7V, 10V | 18mOhm @ 15A, 10V | Through Hole | 4V @ 1mA | 21.4 nC @ 10 V | 100 V | ±20V | 1482 pF @ 50 V | - | - | I2PAK | - | 111W (Ta) | -55°C ~ 175°C (TJ) |
|
BUK7675-55A,118NEXPERIA BUK7675-55A - POWER FIE NXP Semiconductors |
75,680 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20.3A (Tc) | 10V | 75mOhm @ 10A, 10V | Surface Mount | 4V @ 1mA | - | 55 V | ±20V | 483 pF @ 25 V | AEC-Q101 | - | D2PAK | Automotive | 62W (Tc) | -55°C ~ 175°C (TJ) |
|
BUK6610-75C,118NEXPERIA BUK6610 - N-CHANNEL TRE NXP Semiconductors |
7,200 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 78A (Tc) | 10V | 10mOhm @ 25A, 10V | Surface Mount | 2.8V @ 1mA | 81 nC @ 10 V | 75 V | ±16V | 5251 pF @ 25 V | AEC-Q101 | - | D2PAK | Automotive | 158W (Tc) | -55°C ~ 175°C (TJ) |
|
PHB18NQ10T,118MOSFET N-CH 100V 18A D2PAK NXP USA Inc. |
1,966 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 90mOhm @ 9A, 10V | Surface Mount | 4V @ 1mA | 21 nC @ 10 V | 100 V | ±20V | 633 pF @ 25 V | - | - | D2PAK | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
|
|
PHB29N08T,118NEXPERIA PHB29N08T - 27A, 75V, 0 NXP Semiconductors |
2,600 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 11V | 50mOhm @ 14A, 11V | Surface Mount | 5V @ 2mA | 19 nC @ 10 V | 75 V | ±30V | 810 pF @ 25 V | - | - | D2PAK | - | 88W (Tc) | -55°C ~ 175°C (TJ) |
|
|
BUK7635-100A,118BUK7635-100 - N-CHANNEL TRENCHMO NXP Semiconductors |
2,676 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 41A (Ta) | 10V | 35mOhm @ 25A, 10V | Surface Mount | 4V @ 1mA | - | 100 V | ±20V | 2535 pF @ 25 V | - | - | D2PAK | - | 149W (Ta) | -55°C ~ 175°C (TJ) |
