| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PBHV8115TLH215NEXPERIA PBHV8115X - SMALL SIGNA NXP Semiconductors |
4,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PMXB65ENEZNEXPERIA PMXB65EN - SMALL SIGNAL NXP Semiconductors |
710,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PMPB23XNEZPMPB23XNE - 20 V, SINGLE N-CHANN NXP Semiconductors |
3,600 | - |
|
数据表 |
- | 6-UDFN Exposed Pad | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Ta) | 1.8V, 4.5V | 22mOhm @ 7A, 4.5V | Surface Mount | 900mV @ 250µA | 17 nC @ 4.5 V | 20 V | ±12V | 1136 pF @ 10 V | - | - | DFN2020MD-6 | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) |
|
PMK50XP,518NEXPERIA PMK50XP - 7.9A, 20V, 0. NXP Semiconductors |
47,920 | - |
|
数据表 |
TrenchMOS™ | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 7.9A (Tc) | 4.5V | 50mOhm @ 2.8A, 4.5V | Surface Mount | 950mV @ 250µA | 10 nC @ 4.5 V | 20 V | ±12V | 1020 pF @ 20 V | - | - | 8-SO | - | 5W (Tc) | -55°C ~ 150°C (TJ) |
|
PSMN020-30MLCXTRANSISTOR >30MHZ NXP USA Inc. |
6,000 | - |
|
数据表 |
- | SOT-1210, 8-LFPAK33 (5-Lead) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 31.8A (Tc) | 4.5V, 10V | 18.1mOhm @ 5A, 10V | Surface Mount | 1.95V @ 1mA | 9.5 nC @ 10 V | 30 V | ±20V | 430 pF @ 15 V | - | - | LFPAK33 | - | 33W (Tc) | -55°C ~ 175°C (TJ) |
|
PMPB95ENEA/FXNEXPERIA PMPB95ENEA - 80 V, SING NXP Semiconductors |
5,115 | - |
|
数据表 |
- | 6-UDFN Exposed Pad | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 4.1A (Ta) | 4.5V, 10V | 105mOhm @ 2.8A, 10V | Surface Mount | 2.7V @ 250µA | 14.9 nC @ 10 V | 80 V | ±20V | 504 pF @ 40 V | AEC-Q101 | - | DFN2020MD-6 | Automotive | 1.6W (Ta) | -55°C ~ 150°C (TJ) |
|
PMCM6501UNE023NEXPERIA PMCM6501UNE - 20V, N-CH NXP Semiconductors |
85,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PMN28UN,135MOSFET N-CH 12V 5.7A 6TSOP NXP USA Inc. |
16,992 | - |
|
数据表 |
TrenchMOS™ | SC-74, SOT-457 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.7A (Tc) | 1.8V, 4.5V | 34mOhm @ 2A, 4.5V | Surface Mount | 700mV @ 1mA (Typ) | 10.1 nC @ 4.5 V | 12 V | ±8V | 740 pF @ 10 V | - | - | 6-TSOP | - | 1.75W (Tc) | -55°C ~ 150°C (TJ) |
|
PMCM6501VPEZSMALL SIGNAL FIELD-EFFECT TRANSI NXP Semiconductors |
6,826,065 | - |
|
数据表 |
- | 6-XFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 6.2A (Ta) | 1.8V, 4.5V | 25mOhm @ 3A, 4.5V | Surface Mount | 900mV @ 250µA | 29.4 nC @ 4.5 V | 12 V | ±8V | 1400 pF @ 6 V | - | - | 6-WLCSP (1.48x0.98) | - | 556mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) |
|
PMCM6501VNEZPMCM6501VNE - 12V, N-CHANNEL TRE NXP USA Inc. |
2,009,850 | - |
|
数据表 |
- | 6-XFBGA, WLCSP | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 7.3A (Ta) | 1.5V, 4.5V | 18mOhm @ 3A, 4.5V | Surface Mount | 900mV @ 250µA | 24 nC @ 4.5 V | 12 V | ±8V | 920 pF @ 6 V | - | - | 6-WLCSP (1.48x0.98) | - | 556mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) |