| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUK7E4R6-60E,127NEXPERIA BUK7E4 - TRANSISTOR >30 NXP Semiconductors |
2,920 | - |
|
数据表 |
TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 4.6mOhm @ 25A, 10V | Through Hole | 4V @ 1mA | 82 nC @ 10 V | 60 V | ±20V | 6230 pF @ 25 V | AEC-Q101 | - | I2PAK | Automotive | 234W (Tc) | -55°C ~ 175°C (TJ) |
|
PMF290XN,115MOSFET N-CH 20V 1A SOT323-3 NXP USA Inc. |
4,288 | - |
|
数据表 |
TrenchMOS™ | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1A (Tc) | 2.5V, 4.5V | 350mOhm @ 200mA, 4.5V | Surface Mount | 1.5V @ 250µA | 0.72 nC @ 4.5 V | 20 V | ±12V | 34 pF @ 20 V | - | - | SC-70 | - | 560mW (Tc) | -55°C ~ 150°C (TJ) |
|
|
PH5330E,115MOSFET N-CH 30V 80A LFPAK56 NXP USA Inc. |
4,704 | - |
|
数据表 |
TrenchMOS™ | SC-100, SOT-669 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | Surface Mount | 2.5V @ 1mA | 21 nC @ 5 V | 30 V | ±20V | 2010 pF @ 10 V | - | - | LFPAK56, Power-SO8 | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
BUK7E3R1-40E,127NEXPERIA BUK7E3R1-40E - 100A, 40 NXP Semiconductors |
1,263 | - |
|
数据表 |
TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 3.1mOhm @ 25A, 10V | Through Hole | 4V @ 1mA | 79 nC @ 10 V | 40 V | ±20V | 6200 pF @ 25 V | AEC-Q101 | - | I2PAK | Automotive | 234W (Tc) | -55°C ~ 175°C (TJ) |
|
PSMN2R8-40BS,118MOSFET N-CH 40V 100A D2PAK NXP USA Inc. |
6,867 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 2.9mOhm @ 10A, 10V | Surface Mount | 4V @ 1mA | 71 nC @ 10 V | 40 V | ±20V | 4491 pF @ 20 V | - | - | D2PAK | - | 211W (Tc) | -55°C ~ 175°C (TJ) |
|
BUK7E2R3-40E,127NEXPERIA BUK7E2R3-40E - 120A, 40 NXP Semiconductors |
3,778 | - |
|
数据表 |
TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 2.3mOhm @ 25A, 10V | Through Hole | 4V @ 1mA | 109.2 nC @ 10 V | 40 V | ±20V | 8500 pF @ 25 V | AEC-Q101 | - | I2PAK | Automotive | 293W (Tc) | -55°C ~ 175°C (TJ) |
|
BUK6E2R3-40C,127NEXPERIA BUK6E2R3-40C - 120A, 40 NXP Semiconductors |
2,000 | - |
|
数据表 |
TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 2.3mOhm @ 25A, 10V | Through Hole | 2.8V @ 1mA | 260 nC @ 10 V | 40 V | ±16V | 15100 pF @ 25 V | AEC-Q101 | - | I2PAK | Automotive | 306W (Tc) | -55°C ~ 175°C (TJ) |
|
BUK6E3R2-55C,127NEXPERIA BUK6E3R2-55C - 120A, 55 NXP Semiconductors |
4,973 | - |
|
数据表 |
TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 3.2mOhm @ 25A, 10V | Through Hole | 2.8V @ 1mA | 258 nC @ 10 V | 55 V | ±16V | 15300 pF @ 25 V | AEC-Q101 | - | I2PAK | Automotive | 306W (Tc) | -55°C ~ 175°C (TJ) |
|
BUK6E4R0-75C,127NEXPERIA BUK6E4R0-75C - 120A, 75 NXP Semiconductors |
19,000 | - |
|
数据表 |
TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 4.5V, 10V | 4.2mOhm @ 25A, 10V | Through Hole | 2.8V @ 1mA | 234 nC @ 10 V | 75 V | ±16V | 15450 pF @ 25 V | AEC-Q101 | - | I2PAK | Automotive | 306W (Tc) | -55°C ~ 175°C (TJ) |
|
PHP20NQ20T,127NEXPERIA PHP20NQ20T - 20A, 200V, NXP Semiconductors |
7,446 | - |
|
数据表 |
TrenchMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 130mOhm @ 10A, 10V | Through Hole | 4V @ 1mA | 65 nC @ 10 V | 200 V | ±20V | 2470 pF @ 25 V | - | - | TO-220AB | - | 150W (Tc) | -55°C ~ 175°C (TJ) |