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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BUK7E4R6-60E,127

BUK7E4R6-60E,127

NEXPERIA BUK7E4 - TRANSISTOR >30

NXP Semiconductors

2,920 -
BUK7E4R6-60E,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 4.6mOhm @ 25A, 10V Through Hole 4V @ 1mA 82 nC @ 10 V 60 V ±20V 6230 pF @ 25 V AEC-Q101 - I2PAK Automotive 234W (Tc) -55°C ~ 175°C (TJ)
PMF290XN,115

PMF290XN,115

MOSFET N-CH 20V 1A SOT323-3

NXP USA Inc.

4,288 -
PMF290XN,115

数据表

TrenchMOS™ SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1A (Tc) 2.5V, 4.5V 350mOhm @ 200mA, 4.5V Surface Mount 1.5V @ 250µA 0.72 nC @ 4.5 V 20 V ±12V 34 pF @ 20 V - - SC-70 - 560mW (Tc) -55°C ~ 150°C (TJ)
PH5330E,115

PH5330E,115

MOSFET N-CH 30V 80A LFPAK56

NXP USA Inc.

4,704 -
PH5330E,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V Surface Mount 2.5V @ 1mA 21 nC @ 5 V 30 V ±20V 2010 pF @ 10 V - - LFPAK56, Power-SO8 - 62.5W (Tc) -55°C ~ 150°C (TJ)
BUK7E3R1-40E,127

BUK7E3R1-40E,127

NEXPERIA BUK7E3R1-40E - 100A, 40

NXP Semiconductors

1,263 -
BUK7E3R1-40E,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.1mOhm @ 25A, 10V Through Hole 4V @ 1mA 79 nC @ 10 V 40 V ±20V 6200 pF @ 25 V AEC-Q101 - I2PAK Automotive 234W (Tc) -55°C ~ 175°C (TJ)
PSMN2R8-40BS,118

PSMN2R8-40BS,118

MOSFET N-CH 40V 100A D2PAK

NXP USA Inc.

6,867 -
PSMN2R8-40BS,118

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 2.9mOhm @ 10A, 10V Surface Mount 4V @ 1mA 71 nC @ 10 V 40 V ±20V 4491 pF @ 20 V - - D2PAK - 211W (Tc) -55°C ~ 175°C (TJ)
BUK7E2R3-40E,127

BUK7E2R3-40E,127

NEXPERIA BUK7E2R3-40E - 120A, 40

NXP Semiconductors

3,778 -
BUK7E2R3-40E,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2.3mOhm @ 25A, 10V Through Hole 4V @ 1mA 109.2 nC @ 10 V 40 V ±20V 8500 pF @ 25 V AEC-Q101 - I2PAK Automotive 293W (Tc) -55°C ~ 175°C (TJ)
BUK6E2R3-40C,127

BUK6E2R3-40C,127

NEXPERIA BUK6E2R3-40C - 120A, 40

NXP Semiconductors

2,000 -
BUK6E2R3-40C,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2.3mOhm @ 25A, 10V Through Hole 2.8V @ 1mA 260 nC @ 10 V 40 V ±16V 15100 pF @ 25 V AEC-Q101 - I2PAK Automotive 306W (Tc) -55°C ~ 175°C (TJ)
BUK6E3R2-55C,127

BUK6E3R2-55C,127

NEXPERIA BUK6E3R2-55C - 120A, 55

NXP Semiconductors

4,973 -
BUK6E3R2-55C,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.2mOhm @ 25A, 10V Through Hole 2.8V @ 1mA 258 nC @ 10 V 55 V ±16V 15300 pF @ 25 V AEC-Q101 - I2PAK Automotive 306W (Tc) -55°C ~ 175°C (TJ)
BUK6E4R0-75C,127

BUK6E4R0-75C,127

NEXPERIA BUK6E4R0-75C - 120A, 75

NXP Semiconductors

19,000 -
BUK6E4R0-75C,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 4.2mOhm @ 25A, 10V Through Hole 2.8V @ 1mA 234 nC @ 10 V 75 V ±16V 15450 pF @ 25 V AEC-Q101 - I2PAK Automotive 306W (Tc) -55°C ~ 175°C (TJ)
PHP20NQ20T,127

PHP20NQ20T,127

NEXPERIA PHP20NQ20T - 20A, 200V,

NXP Semiconductors

7,446 -
PHP20NQ20T,127

数据表

TrenchMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 130mOhm @ 10A, 10V Through Hole 4V @ 1mA 65 nC @ 10 V 200 V ±20V 2470 pF @ 25 V - - TO-220AB - 150W (Tc) -55°C ~ 175°C (TJ)
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