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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN3R3-80ES,127

PSMN3R3-80ES,127

ELEMENT, NCHANNEL, SILICON, MOSF

NXP USA Inc.

1,415 -
PSMN3R3-80ES,127

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.3mOhm @ 25A, 10V Through Hole 4V @ 1mA 139 nC @ 10 V 80 V ±20V 9961 pF @ 40 V - - I2PAK - 338W (Tc) -55°C ~ 175°C (TJ)
BUK7C06-40AITE,118

BUK7C06-40AITE,118

MOSFET N-CH 40V 75A D2PAK

NXP USA Inc.

3,200 -
BUK7C06-40AITE,118

数据表

TrenchMOS™ TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 6mOhm @ 50A, 10V Surface Mount 4V @ 1mA 120 nC @ 10 V 40 V ±20V 4300 pF @ 25 V AEC-Q101 Current Sensing D2PAK Automotive 272W (Tc) -55°C ~ 175°C (TJ)
BUK7E2R7-30B,127

BUK7E2R7-30B,127

MOSFET N-CH 30V 75A I2PAK

NXP USA Inc.

6,391 -
BUK7E2R7-30B,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 2.7mOhm @ 25A, 10V Through Hole 4V @ 1mA 91 nC @ 10 V 30 V ±20V 6212 pF @ 25 V - - I2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
PSMN057-200P,127

PSMN057-200P,127

MOSFET N-CH 200V 39A TO220AB

NXP USA Inc.

1,992 -
PSMN057-200P,127

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
BUK9E3R2-40B,127

BUK9E3R2-40B,127

MOSFET N-CH 40V 100A I2PAK

NXP USA Inc.

7,053 -
BUK9E3R2-40B,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 2.8mOhm @ 25A, 10V Through Hole 2V @ 1mA 94 nC @ 5 V 40 V ±15V 10502 pF @ 25 V - - I2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
BUK7E4R3-75C,127

BUK7E4R3-75C,127

MOSFET N-CH 75V 100A I2PAK

NXP USA Inc.

3,002 -
BUK7E4R3-75C,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 4.3mOhm @ 25A, 10V Through Hole 4V @ 1mA 142 nC @ 10 V 75 V ±20V 11659 pF @ 25 V - - I2PAK - 333W (Tc) -55°C ~ 175°C (TJ)
PSMN1R9-40PL127

PSMN1R9-40PL127

N-CHANNEL POWER MOSFET

NXP USA Inc.

255 -
PSMN1R9-40PL127

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 150A (Ta) 4.5V, 10V 1.7mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 230 nC @ 10 V 40 V ±20V 13200 pF @ 25 V - - TO-220AB - 349W (Ta) -55°C ~ 175°C (TJ)
BUK9609-55A,118

BUK9609-55A,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.

8,173 -
BUK9609-55A,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 8mOhm @ 25A, 10V Surface Mount 2V @ 1mA 60 nC @ 5 V 55 V ±15V 4633 pF @ 25 V - - D2PAK - 211W (Tc) -55°C ~ 175°C (TJ)
BUK962R1-40E,118

BUK962R1-40E,118

MOSFET N-CH 40V 120A D2PAK

NXP USA Inc.

2,536 -
BUK962R1-40E,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 1.8mOhm @ 25A, 10V Surface Mount 2.1V @ 1mA 87.8 nC @ 5 V 40 V ±10V 13160 pF @ 25 V - - D2PAK - 293W (Tc) -55°C ~ 175°C (TJ)
BUK764R3-40B,118

BUK764R3-40B,118

MOSFET N-CH 40V 75A D2PAK

NXP USA Inc.

7,959 -
BUK764R3-40B,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4.3mOhm @ 25A, 10V Surface Mount 4V @ 1mA 69 nC @ 10 V 40 V ±20V 4824 pF @ 25 V - - D2PAK - 254W (Tc) -55°C ~ 175°C (TJ)
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