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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMCM6501UNEZPMCM6501UNE - 20V, N-CHANNEL TRE NXP USA Inc. |
4,464 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PH5830DLXPH5830 - N-CHANNEL TRENCHMOS LOG NXP USA Inc. |
152,950 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PH5830DL,115PH5830 - N-CHANNEL TRENCHMOS LOG NXP USA Inc. |
106,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUK6213-30C,118NEXPERIA BUK6213-30C - 47A, 30V, NXP Semiconductors |
17,100 | - |
|
数据表 |
TrenchMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 10V | 14mOhm @ 10A, 10V | Surface Mount | 2.8V @ 1mA | 19.5 nC @ 10 V | 30 V | ±16V | 1108 pF @ 25 V | AEC-Q101 | - | DPAK | Automotive | 60W (Tc) | -55°C ~ 175°C (TJ) |
|
PH2525L,115NEXPERIA PH2525L - 100A, 25V, 0. NXP Semiconductors |
4,100 | - |
|
数据表 |
TrenchMOS™ | SC-100, SOT-669 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 25A, 10V | Surface Mount | 2.15V @ 1mA | 34.7 nC @ 4.5 V | 25 V | ±20V | 4470 pF @ 12 V | - | - | LFPAK56, Power-SO8 | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
PH1030DLSXPOWER MOS NXP USA Inc. |
1,400 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PH3120L,115NEXPERIA PH3120L - 100A, 20V, 0. NXP Semiconductors |
17,889 | - |
|
数据表 |
TrenchMOS™ | SC-100, SOT-669 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 2.65mOhm @ 25A, 10V | Surface Mount | 2V @ 1mA | 48.5 nC @ 4.5 V | 20 V | ±20V | 4457 pF @ 10 V | - | - | LFPAK56, Power-SO8 | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
PHK12NQ03LT,518NEXPERIA PHK12NQ03LT - 11.8A, 30 NXP Semiconductors |
6,500 | - |
|
数据表 |
TrenchMOS™ | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 11.8A (Tj) | 4.5V, 10V | 10.5mOhm @ 12A, 10V | Surface Mount | 2V @ 250µA | 17.6 nC @ 5 V | 30 V | ±20V | 1335 pF @ 16 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF530N,127MOSFET N-CH 100V 17A TO220AB NXP USA Inc. |
9,602 | - |
|
数据表 |
TrenchMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 110mOhm @ 9A, 10V | Through Hole | 4V @ 1mA | 40 nC @ 10 V | 100 V | ±20V | 633 pF @ 25 V | - | - | TO-220AB | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRF540,127MOSFET N-CH 100V 23A TO220AB NXP USA Inc. |
9,681 | - |
|
数据表 |
TrenchMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 10V | 77mOhm @ 17A, 10V | Through Hole | 4V @ 1mA | 65 nC @ 10 V | 100 V | ±20V | 1187 pF @ 25 V | - | - | TO-220AB | - | 100W (Tc) | -55°C ~ 175°C (TJ) |
