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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PSMN070-200P,127NEXPERIA PSMN070-200P - 35A, 200 NXP Semiconductors |
6,992 | - |
|
数据表 |
TrenchMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 70mOhm @ 17A, 10V | Through Hole | 4V @ 1mA | 77 nC @ 10 V | 200 V | ±20V | 4570 pF @ 25 V | - | - | TO-220AB | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
PHB110NQ08T,118MOSFET N-CH 75V 75A D2PAK NXP USA Inc. |
750 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 9mOhm @ 25A, 10V | Surface Mount | 4V @ 1mA | 113.1 nC @ 10 V | 75 V | ±20V | 4860 pF @ 25 V | - | - | D2PAK | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
|
BUK7E5R2-100E,127NEXPERIA BUK7E5R2-100E - 120A, 1 NXP Semiconductors |
473 | - |
|
数据表 |
TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 5.2mOhm @ 25A, 10V | Through Hole | 4V @ 1mA | 180 nC @ 10 V | 100 V | ±20V | 11810 pF @ 25 V | AEC-Q101 | - | I2PAK | Automotive | 349W (Tc) | -55°C ~ 175°C (TJ) |
|
|
BUK661R8-30C,118MOSFET N-CH 30V 120A D2PAK NXP USA Inc. |
1,468 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 4.5V, 10V | 1.9mOhm @ 25A, 10V | Surface Mount | 2.8V @ 1mA | 168 nC @ 10 V | 30 V | ±16V | 10918 pF @ 25 V | AEC-Q101 | - | D2PAK | Automotive | 263W (Tc) | -55°C ~ 175°C (TJ) |
|
PSMN9R5-100PS,127NEXPERIA PSMN9R5-100PS - 89A, 10 NXP Semiconductors |
42,799 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUK763R1-40B,118NEXPERIA BUK763R1-40B - 75A, 40V NXP Semiconductors |
3,590 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 3.1mOhm @ 25A, 10V | Surface Mount | 4V @ 1mA | 94 nC @ 10 V | 40 V | ±20V | 6808 pF @ 25 V | AEC-Q101 | - | D2PAK | Automotive | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
BUK962R6-40E,118MOSFET N-CH 40V 100A D2PAK NXP USA Inc. |
604 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 5V, 10V | 2.4mOhm @ 25A, 10V | Surface Mount | 2.1V @ 250µA | 80.6 nC @ 32 V | 40 V | ±10V | 10285 pF @ 25 V | AEC-Q101 | - | D2PAK | Automotive | 263W (Tc) | -55°C ~ 175°C (TJ) |
|
|
PSMN2R0-60ES,127NEXPERIA PSMN2R0-60ES - 120A, 60 NXP Semiconductors |
7,334 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 2.2mOhm @ 25A, 10V | Through Hole | 4V @ 1mA | 137 nC @ 10 V | 60 V | ±20V | 9997 pF @ 30 V | - | - | I2PAK | - | 338W (Tc) | -55°C ~ 175°C (TJ) |
|
BUK6C3R3-75C,118NEXPERIA BUK6C3R3 - N-CHANNEL TR NXP Semiconductors |
480 | - |
|
数据表 |
TrenchMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 181A (Tc) | 10V | 3.4mOhm @ 90A, 10V | Surface Mount | 2.8V @ 1mA | 253 nC @ 10 V | 75 V | ±16V | 15800 pF @ 25 V | AEC-Q101 | - | D2PAK-7 | Automotive | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
BUK7C10-75AITE,118NEXPERIA BUK7C10-75 - 75A, 75V, NXP Semiconductors |
1,069 | - |
|
数据表 |
TrenchMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 10mOhm @ 50A, 10V | Surface Mount | 4V @ 1mA | 121 nC @ 10 V | 75 V | ±20V | 4700 pF @ 25 V | AEC-Q101 | Current Sensing | D2PAK-7 | Automotive | 272W (Tc) | -55°C ~ 175°C (TJ) |
