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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BUK761R8-30C,118MOSFET N-CH 30V 100A D2PAK NXP USA Inc. |
9,102 | - |
|
数据表 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 1.8mOhm @ 25A, 10V | Surface Mount | 4V @ 1mA | 150 nC @ 10 V | 30 V | ±20V | 10349 pF @ 25 V | - | - | D2PAK | - | 333W (Tc) | -55°C ~ 175°C (TJ) |
|
NX7002BKMBYLNEXPERIA NX7002B - 60V, N-CHANNE NXP Semiconductors |
55,002 | - |
|
数据表 |
TrenchMOS™ | 3-XFDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350mA (Ta) | 5V, 10V | 2.8Ohm @ 200mA, 10V | Surface Mount | 2.1V @ 250µA | 1 nC @ 10 V | 60 V | ±20V | 23.6 pF @ 10 V | - | - | DFN1006B-3 | - | 350mW (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) |
|
PMZ950UPEYLNEXPERIA PMZ950UPE - 20V, P-CHAN NXP Semiconductors |
349,613 | - |
|
数据表 |
- | SC-101, SOT-883 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 500mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 500mA, 4.5V | Surface Mount | 950mV @ 250µA | 2.1 nC @ 4.5 V | 20 V | ±8V | 43 pF @ 10 V | - | - | SOT-883 | - | 360mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) |
|
PMZB600UNEL315NEXPERIA PMZB600UNE - SMALL SIGN NXP Semiconductors |
150,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PMZB370UNE,315NEXPERIA PMZB370UNE - SMALL SIGN NXP Semiconductors |
30,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PMZ1000UN,315NEXPERIA PMZ1000UN - SMALL SIGNA NXP Semiconductors |
10,633,200 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PMZB950UPEL315NEXPERIA PMZB950UPEL - 20 V, P-C NXP Semiconductors |
54,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PMN70XPE,115NEXPERIA PMN70XPE - SMALL SIGNAL NXP Semiconductors |
47,808 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NX2301P,215P-CHANNEL 20V 2A (TA) 400MW (TA) NXP Semiconductors |
159,000 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 1.8V, 4.5V | 120mOhm @ 1A, 4.5V | Surface Mount | 1.1V @ 250µA | 6 nC @ 4.5 V | 20 V | ±8V | 380 pF @ 6 V | AEC-Q101 | - | TO-236AB | Automotive | 400mW (Ta), 2.8W (Tc) | 150°C (TJ) |
|
PMPB29XNE,115MOSFET N-CH 30V 5A DFN2020MD-6 NXP USA Inc. |
4,000 | - |
|
数据表 |
- | 6-XFDFN Exposed Pad | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Ta) | 1.8V, 4.5V | 33mOhm @ 5A, 4.5V | Surface Mount | 900mV @ 250µA | 18.6 nC @ 4.5 V | 30 V | ±12V | 1150 pF @ 15 V | - | - | DFN1010B-6 | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) |
