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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF6724MTRPBF

IRF6724MTRPBF

MOSFET N-CH 30V 27A/150A DIRECT

International Rectifier

1,524 -
IRF6724MTRPBF

数据表

HEXFET® DirectFET™ Isometric MX Bulk Active N-Channel MOSFET (Metal Oxide) 27A (Ta), 150A (Tc) 4.5V, 10V 2.5mOhm @ 27A, 10V Surface Mount 2.35V @ 100µA 54 nC @ 4.5 V 30 V ±20V 4404 pF @ 15 V - - DIRECTFET™ MX - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF2805PBF

IRF2805PBF

IRF2805 - 12V-300V N-CHANNEL POW

International Rectifier

1,000 -
IRF2805PBF

数据表

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4.7mOhm @ 104A, 10V Through Hole 4V @ 250µA 230 nC @ 10 V 55 V ±20V 5110 pF @ 25 V - - TO-220AB - 330W (Tc) -55°C ~ 175°C (TJ)
IRF6797MTRPBF

IRF6797MTRPBF

MOSFET N-CH 25V 36A/210A DIRECT

International Rectifier

11,833 -
IRF6797MTRPBF

数据表

HEXFET® DirectFET™ Isometric MX Bulk Active N-Channel MOSFET (Metal Oxide) 36A (Ta), 210A (Tc) 4.5V, 10V 1.4mOhm @ 38A, 10V Surface Mount 2.35V @ 150µA 68 nC @ 4.5 V 25 V ±20V 5790 pF @ 13 V - - DIRECTFET™ MX - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF7580MTRPBF

IRF7580MTRPBF

IRF7580 - 12V-300V N-CHANNEL POW

International Rectifier

7,423 -
IRF7580MTRPBF

数据表

StrongIRFET™ DirectFET™ Isometric ME Bulk Active N-Channel MOSFET (Metal Oxide) 114A (Tc) 6V, 10V 3.6mOhm @ 70A, 10V Surface Mount 3.7V @ 150µA 180 nC @ 10 V 60 V ±20V 6510 pF @ 25 V - - DirectFET™ Isometric ME - 115W (Tc) -55°C ~ 175°C (TJ)
AUIRL3705ZL

AUIRL3705ZL

MOSFET N-CH 55V 75A TO262

International Rectifier

8,871 -
AUIRL3705ZL

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) - 8mOhm @ 52A, 10V Through Hole 3V @ 250µA 60 nC @ 5 V 55 V - 2880 pF @ 25 V - - TO-262 - 130W (Tc) -55°C ~ 175°C (TJ)
IRF1407PBF

IRF1407PBF

IRF1407 - 12V-300V N-CHANNEL POW

International Rectifier

1,000 -
IRF1407PBF

数据表

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 130A (Tc) 10V 7.8mOhm @ 78A, 10V Through Hole 4V @ 250µA 250 nC @ 10 V 75 V ±20V 5600 pF @ 25 V - - TO-220AB - 330W (Tc) -55°C ~ 175°C (TJ)
AUIRFS8403

AUIRFS8403

MOSFET N-CH 40V 123A D2PAK

International Rectifier

7,413 -
AUIRFS8403

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 123A (Tc) 10V 3.3mOhm @ 70A, 10V Surface Mount 3.9V @ 100µA 93 nC @ 10 V 40 V ±20V 3183 pF @ 25 V - - PG-TO263-3 - 99W (Tc) -55°C ~ 175°C (TJ)
AUIRFS8403TRL

AUIRFS8403TRL

AUIRFS8403 - 20V-40V N-CHANNEL A

International Rectifier

800 -
AUIRFS8403TRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 123A (Tc) 10V 3.3mOhm @ 70A, 10V Surface Mount 3.9V @ 100µA 93 nC @ 10 V 40 V ±20V 3183 pF @ 25 V - - PG-TO263-3 - 99W (Tc) -55°C ~ 175°C (TJ)
IRFB38N20DPBF

IRFB38N20DPBF

IRFB38N20 - 12V-300V N-CHANNEL P

International Rectifier

3,390 -
IRFB38N20DPBF

数据表

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 43A (Tc) 10V 54mOhm @ 26A, 10V Through Hole 5V @ 250µA 91 nC @ 10 V 200 V ±20V 2900 pF @ 25 V - - TO-220AB - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ)
AUIRF1010ZL

AUIRF1010ZL

MOSFET N-CH 55V 75A TO262

International Rectifier

8,552 -
AUIRF1010ZL

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) - 7.5mOhm @ 75A, 10V Through Hole 4V @ 250µA 95 nC @ 10 V 55 V - 2840 pF @ 25 V - - TO-262 - 140W (Tc) -55°C ~ 175°C (TJ)
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