International Rectifier|场效应晶体管（FETs）、MOSFETs - 页 17

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFZ44ZLPBF IRFZ44 - 12V-300V N-CHANNEL POWE International Rectifier	1,350	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	10V	13.9mOhm @ 31A, 10V	Through Hole	4V @ 250µA	43 nC @ 10 V	55 V	±20V	1420 pF @ 25 V	-	-	TO-262	-	80W (Tc)	-55°C ~ 175°C (TJ)
AUIRF1010Z MOSFET N-CH 55V 75A TO220AB International Rectifier	12,268	-	询价单	数据表	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	-	7.5mOhm @ 75A, 10V	Through Hole	4V @ 250µA	95 nC @ 10 V	55 V	-	2840 pF @ 25 V	-	-	TO-220AB	-	140W (Tc)	-55°C ~ 175°C (TJ)
IRLU3636PBF IRLU3636 - 12V-300V N-CHANNEL PO International Rectifier	439	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	6.8mOhm @ 50A, 10V	Through Hole	2.5V @ 100µA	49 nC @ 4.5 V	60 V	±16V	3779 pF @ 50 V	-	-	IPAK	-	143W (Tc)	-55°C ~ 175°C (TJ)
IRF6795MTRPBF IRF6795 - 12V-300V N-CHANNEL POW International Rectifier	29,404	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	32A (Ta), 160A (Tc)	4.5V, 10V	1.8mOhm @ 32A, 10V	Surface Mount	2.35V @ 100µA	53 nC @ 4.5 V	25 V	±20V	4280 pF @ 13 V	-	-	DIRECTFET™ MX	-	2.8W (Ta), 75W (Tc)	-40°C ~ 150°C (TJ)
IRL7486MTRPBF IRL7486M - 12V-300V N-CHANNEL PO International Rectifier	3,193	-	询价单	数据表	HEXFET®, StrongIRFET™	DirectFET™ Isometric ME	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	209A (Tc)	4.5V, 10V	1.25mOhm @ 123A, 10V	Surface Mount	2.5V @ 150µA	111 nC @ 4.5 V	40 V	±20V	6904 pF @ 25 V	-	-	DirectFET™ Isometric ME	-	104W (Tc)	-55°C ~ 150°C (TJ)
AUIRLU3114Z AUIRLU3114Z - 20V-40V N-CHANNEL International Rectifier	10,317	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	130A (Tc)	4.5V, 10V	4.9mOhm @ 42A, 10V	Through Hole	2.5V @ 100µA	56 nC @ 4.5 V	40 V	±16V	3810 pF @ 25 V	AEC-Q101	-	PG-TO251-3	Automotive	140W (Tc)	-55°C ~ 175°C (TJ)
AUIRFZ24NSTRL MOSFET N-CH 55V 17A DPAK International Rectifier	46,400	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	70mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	20 nC @ 10 V	55 V	±20V	370 pF @ 25 V	-	-	TO-252AA (DPAK)	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)
IRF6726MTRPBFTR IRF6726 - 12V-300V N-CHANNEL POW International Rectifier	4,800	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MT	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	32A (Ta), 180A (Tc)	4.5V, 10V	1.7mOhm @ 32A, 10V	Surface Mount	2.35V @ 150µA	77 nC @ 4.5 V	30 V	±20V	6140 pF @ 15 V	-	-	DIRECTFET™ MT	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)
IRF6644TRPBF IRF6644 - 12V-300V N-CHANNEL POW International Rectifier	503,415	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	10.3A (Ta), 60A (Tc)	10V	13mOhm @ 10.3A, 10V	Surface Mount	4.8V @ 150µA	47 nC @ 10 V	100 V	±20V	2210 pF @ 25 V	-	-	DIRECTFET™ MN	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)
IRF40DM229 MOSFET N-CH 40V 159A DIRECTFET International Rectifier	4,396	-	询价单	数据表	StrongIRFET™	DirectFET™ Isometric MF	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	159A (Tc)	6V, 10V	1.85mOhm @ 97A, 10V	Surface Mount	3.9V @ 100µA	161 nC @ 10 V	40 V	±20V	5317 pF @ 25 V	-	-	DirectFET™ Isometric MF	-	83W (Tc)	-55°C ~ 150°C (TJ)

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