International Rectifier|场效应晶体管（FETs）、MOSFETs - 页 1

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AUIRLR3705Z AUTOMOTIVE HEXFET N-CHANNEL International Rectifier	8,089	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	4.5V, 10V	8mOhm @ 42A, 10V	Surface Mount	3V @ 250µA	66 nC @ 5 V	55 V	±16V	2900 pF @ 25 V	-	-	DPAK	-	130W (Tc)	-55°C ~ 175°C (TJ)
IRFP048NPBF HEXFET POWER MOSFET International Rectifier	7,970	-	询价单	数据表	HEXFET®	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	64A (Tc)	10V	16mOhm @ 37A, 10V	Through Hole	4V @ 250µA	89 nC @ 10 V	55 V	±20V	1900 pF @ 25 V	-	-	TO-247AC	-	140W (Tc)	-55°C ~ 175°C (TJ)
IRF3709SPBF HEXFET SMPS POWER MOSFET International Rectifier	4,536	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	9mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	41 nC @ 5 V	30 V	±20V	2672 pF @ 16 V	-	-	D2PAK	-	3.1W (Ta), 120W (Tc)	-55°C ~ 150°C (TJ)
IRFI4228PBF-IR HEXFET N-CHANNEL POWER MOSFET International Rectifier	4,470	-	询价单	数据表	HEXFET®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	34A (Tc)	10V	16mOhm @ 20A, 10V	Through Hole	5V @ 250µA	110 nC @ 10 V	150 V	±30V	4560 pF @ 25 V	-	-	TO-220AB Full-Pak	-	46W (Tc)	-40°C ~ 150°C (TJ)
IRF9383MTRPBF IRF9383 - 20V-250V P-CHANNEL POW International Rectifier	5,573	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	22A (Ta), 160A (Tc)	4.5V, 10V	2.9mOhm @ 22A, 10V	Surface Mount	2.4V @ 150µA	130 nC @ 10 V	30 V	±20V	7305 pF @ 15 V	-	-	DIRECTFET™ MX	-	2.1W (Ta), 113W (Tc)	-40°C ~ 150°C (TJ)
AUIRF3710ZSTRR MOSFET N-CH 100V 59A D2PAK International Rectifier	5,896	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	59A (Tc)	-	18mOhm @ 35A, 10V	Surface Mount	4V @ 250µA	120 nC @ 10 V	100 V	-	2900 pF @ 25 V	-	-	PG-TO263-3	-	-	-
AUIRF7737L2TR MOSFET N-CH 40V 31A/156A DIRECT International Rectifier	3,113	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L6	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	31A (Ta), 156A (Tc)	10V	1.9mOhm @ 94A, 10V	Surface Mount	4V @ 150µA	134 nC @ 10 V	40 V	±20V	5469 pF @ 25 V	-	-	DIRECTFET L6	-	3.3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)
IRF3709PBF IRF3709 - 12V-300V N-CHANNEL POW International Rectifier	2,576	-	询价单	数据表	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	9mOhm @ 15A, 10V	Through Hole	3V @ 250µA	41 nC @ 5 V	30 V	±20V	2672 pF @ 16 V	-	-	TO-220AB	-	3.1W (Ta), 120W (Tc)	-55°C ~ 150°C (TJ)
IRFH7440TRPBF IRFH7440 - 12V-300V N-CHANNEL PO International Rectifier	2,758	-	询价单	数据表	HEXFET®, StrongIRFET™	8-PowerTDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	85A (Tc)	6V, 10V	2.4mOhm @ 50A, 10V	Surface Mount	3.9V @ 100µA	138 nC @ 10 V	40 V	±20V	4574 pF @ 25 V	-	-	8-PQFN (5x6)	-	104W (Tc)	-55°C ~ 150°C (TJ)
IRF6722MTRPBF MOSFET N-CH 30V 13A/56A DIRECTFT International Rectifier	8,265	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MP	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 56A (Tc)	4.5V, 10V	7.7mOhm @ 13A, 10V	Surface Mount	2.4V @ 50µA	17 nC @ 4.5 V	30 V	±20V	1300 pF @ 15 V	-	-	DIRECTFET™ MP	-	2.3W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)

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