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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AUIRFC8407TR

AUIRFC8407TR

AUIRFC8407 - 30V-250V N-CHANNEL

International Rectifier

196,217 -
AUIRFC8407TR

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRFU7746PBF

IRFU7746PBF

TRENCH 40<-<100V

International Rectifier

3,000 -
IRFU7746PBF

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 56A (Tc) 6V, 10V 11.2mOhm @ 35A, 10V Through Hole 3.7V @ 100µA 89 nC @ 10 V 75 V ±20V 3107 pF @ 25 V - - IPAK (TO-251AA) - 99W (Tc) -55°C ~ 175°C (TJ)
IRFH7934TRPBF

IRFH7934TRPBF

MOSFET N-CH 30V 24A/76A 8PQFN

International Rectifier

4,649 -
IRFH7934TRPBF

数据表

HEXFET® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 24A (Ta), 76A (Tc) 4.5V, 10V 3.5mOhm @ 24A, 10V Surface Mount 2.35V @ 50µA 30 nC @ 4.5 V 30 V ±20V 3100 pF @ 15 V - - 8-PQFN (5x6) - 3.1W (Ta) -55°C ~ 150°C (TJ)
AUIRFU8401

AUIRFU8401

MOSFET N-CH 40V 100A I-PAK

International Rectifier

8,142 -
AUIRFU8401

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 4.25mOhm @ 60A, 10V Through Hole 3.9V @ 500µA 63 nC @ 10 V 40 V ±20V 2200 pF @ 25 V - - IPAK - 79W (Tc) -55°C ~ 175°C (TJ)
IRF7470TRPBF

IRF7470TRPBF

IRF7470 - 12V-300V N-CHANNEL POW

International Rectifier

1,278 -
IRF7470TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 2.8V, 10V 13mOhm @ 10A, 10V Surface Mount 2V @ 250µA 44 nC @ 4.5 V 40 V ±12V 3430 pF @ 20 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRFU7440PBF

IRFU7440PBF

IRFU7440 - 12V-300V N-CHANNEL PO

International Rectifier

73,213 -
IRFU7440PBF

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 6V, 10V 2.4mOhm @ 90A, 10V Through Hole 3.9V @ 100µA 134 nC @ 10 V 40 V ±20V 4610 pF @ 25 V - - IPAK (TO-251AA) - 140W (Tc) -55°C ~ 175°C (TJ)
AUIRFU4292

AUIRFU4292

MOSFET_(120V,300V)

International Rectifier

18,000 -
AUIRFU4292

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V Through Hole 5V @ 50µA 20 nC @ 10 V 250 V ±20V 705 pF @ 25 V - - IPAK - 100W (Tc) -55°C ~ 175°C (TJ)
AUIRFR2905Z

AUIRFR2905Z

AUIRFR2905Z - 55V-60V N-CHANNEL

International Rectifier

3,461 -
AUIRFR2905Z

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 14.5mOhm @ 36A, 10V Surface Mount 4V @ 250µA 44 nC @ 10 V 55 V ±20V 1380 pF @ 25 V - - DPAK - 110W (Tc) -55°C ~ 175°C (TJ)
AUIRFR4292

AUIRFR4292

MOSFET N-CH 250V 9.3A DPAK

International Rectifier

2,435 -
AUIRFR4292

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V Surface Mount 5V @ 50µA 20 nC @ 10 V 250 V ±20V 705 pF @ 25 V - - DPAK - 100W (Tc) -55°C ~ 175°C (TJ)
IRF6637TRPBF

IRF6637TRPBF

MOSFET N-CH 30V 14A/59A DIRECTFT

International Rectifier

23,085 -
IRF6637TRPBF

数据表

HEXFET® DirectFET™ Isometric MP Bulk Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 59A (Tc) 4.5V, 10V 7.7mOhm @ 14A, 10V Surface Mount 2.35V @ 250µA 17 nC @ 4.5 V 30 V ±20V 1330 pF @ 15 V - - DIRECTFET™ MP - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
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