International Rectifier|场效应晶体管（FETs）、MOSFETs - 页 19

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AUIRFS8405TRL MOSFET N-CH 40V 120A D2PAK International Rectifier	115,200	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.3mOhm @ 100A, 10V	Surface Mount	3.9V @ 100µA	161 nC @ 10 V	40 V	±20V	5193 pF @ 25 V	-	-	PG-TO263-3	-	163W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS8405 MOSFET N-CH 40V 120A D2PAK International Rectifier	1,324	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.3mOhm @ 100A, 10V	Surface Mount	3.9V @ 100µA	161 nC @ 10 V	40 V	±20V	5193 pF @ 25 V	-	-	PG-TO263-3	-	163W (Tc)	-55°C ~ 175°C (TJ)
IRF6646TRPBF IRF6646 - 12V-300V N-CHANNEL POW International Rectifier	232,056	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta), 68A (Tc)	10V	9.5mOhm @ 12A, 10V	Surface Mount	4.9V @ 150µA	50 nC @ 10 V	80 V	±20V	2060 pF @ 25 V	-	-	DIRECTFET™ MN	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)
AUIRF4104STRL MOSFET N-CH 40V 75A D2PAK International Rectifier	456	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	-	5.5mOhm @ 75A, 10V	Surface Mount	4V @ 250µA	100 nC @ 10 V	40 V	-	3000 pF @ 25 V	-	-	D2PAK	-	140W (Tc)	-55°C ~ 175°C (TJ)
IRF6716MTRPBF IRF6716 - 12V-300V N-CHANNEL POW International Rectifier	44,319	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	39A (Ta), 180A (Tc)	4.5V, 10V	1.6mOhm @ 40A, 10V	Surface Mount	2.4V @ 100µA	59 nC @ 4.5 V	25 V	±20V	5150 pF @ 13 V	-	-	DIRECTFET™ MX	-	3.6W (Ta), 78W (Tc)	-40°C ~ 150°C (TJ)
AUIRL3705ZS MOSFET N-CH 55V 75A D2PAK International Rectifier	8,500	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	4.5V, 10V	8mOhm @ 52A, 10V	Surface Mount	3V @ 250µA	60 nC @ 5 V	55 V	±16V	2880 pF @ 25 V	-	-	D2PAK	-	130W (Tc)	-55°C ~ 175°C (TJ)
AUIRF4104S MOSFET N-CH 40V 75A D2PAK International Rectifier	7,751	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	5.5mOhm @ 75A, 10V	Surface Mount	4V @ 250µA	100 nC @ 10 V	40 V	±20V	3000 pF @ 25 V	-	-	D2PAK	-	140W (Tc)	-55°C ~ 175°C (TJ)
IRFSL7734PBF IRFSL7734 - 12V-300V N-CHANNEL P International Rectifier	280	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	183A (Tc)	6V, 10V	3.5mOhm @ 100A, 10V	Through Hole	3.7V @ 250µA	270 nC @ 10 V	75 V	±20V	10150 pF @ 25 V	-	-	TO-262	-	290W (Tc)	-55°C ~ 175°C (TJ)
AUIRFZ48N MOSFET N-CH 55V 69A TO220AB International Rectifier	18,190	-	询价单	数据表	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	69A (Tc)	10V	14mOhm @ 40A, 10V	Through Hole	4V @ 100µA	63 nC @ 10 V	55 V	±20V	1900 pF @ 25 V	-	-	TO-220AB	-	160W (Tc)	-55°C ~ 175°C (TJ)
IRF6726MTRPBF IRF6726 - 12V-300V N-CHANNEL POW International Rectifier	3,930	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MT	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	32A (Ta), 180A (Tc)	4.5V, 10V	1.7mOhm @ 32A, 10V	Surface Mount	2.35V @ 150µA	77 nC @ 4.5 V	30 V	±20V	6140 pF @ 15 V	-	-	DIRECTFET™ MT	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)

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