International Rectifier|场效应晶体管（FETs）、MOSFETs - 页 16

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AUIRLR2703TRL MOSFET N-CH 30V 20A DPAK International Rectifier	2,099	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	-	45mOhm @ 14A, 10V	Surface Mount	1V @ 250µA	15 nC @ 4.5 V	30 V	-	450 pF @ 25 V	-	-	DPAK	-	45W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS3806 MOSFET N-CH 60V 43A D2PAK International Rectifier	8,450	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	10V	15.8mOhm @ 25A, 10V	Surface Mount	4V @ 50µA	30 nC @ 10 V	60 V	±20V	1150 pF @ 50 V	-	-	PG-TO263-3	-	71W (Tc)	-55°C ~ 175°C (TJ)
IRF6668TRPBF IRF6668 - 12V-300V N-CHANNEL POW International Rectifier	55,098	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MZ	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	10V	15mOhm @ 12A, 10V	Surface Mount	4.9V @ 100µA	31 nC @ 10 V	80 V	±20V	1320 pF @ 25 V	-	-	DIRECTFET™ MZ	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)
AUIRFU8403 MOSFET N-CH 40V 100A I-PAK International Rectifier	14,422	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.1mOhm @ 76A, 10V	Through Hole	3.9V @ 100µA	99 nC @ 10 V	40 V	±20V	3171 pF @ 25 V	-	-	IPAK	-	99W (Tc)	-55°C ~ 175°C (TJ)
AUIRFSL8403 MOSFET N-CH 40V 123A TO262 International Rectifier	3,030	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	123A (Tc)	10V	3.3mOhm @ 70A, 10V	Through Hole	3.9V @ 100µA	93 nC @ 10 V	40 V	±20V	3183 pF @ 25 V	-	-	TO-262	-	99W (Tc)	-55°C ~ 175°C (TJ)
IRF6714MTRPBF MOSFET N-CH 25V 29A/166A DIRECT International Rectifier	42,142	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	29A (Ta), 166A (Tc)	4.5V, 10V	2.1mOhm @ 29A, 10V	Surface Mount	2.4V @ 100µA	44 nC @ 4.5 V	25 V	±20V	3890 pF @ 13 V	-	-	DIRECTFET™ MX	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)
AUIRF7734M2TR MOSFET N-CH 40V 17A DIRECTFET M2 International Rectifier	4,800	-	询价单	数据表	HEXFET®	DirectFET™ Isometric M2	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	17A (Ta)	10V	4.9mOhm @ 43A, 10V	Surface Mount	4V @ 100µA	72 nC @ 10 V	40 V	±20V	2545 pF @ 25 V	-	-	DirectFET™ Isometric M2	-	2.5W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)
AUIRF7732S2TR MOSFET N-CH 40V 14A DIRECTFET SC International Rectifier	3,106	-	询价单	数据表	HEXFET®	DirectFET™ Isometric SC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	14A (Ta)	10V	6.95mOhm @ 33A, 10V	Surface Mount	4V @ 50µA	45 nC @ 10 V	40 V	±20V	1700 pF @ 25 V	-	-	DIRECTFET™ SC	-	2.5W (Ta), 41W (Tc)	-55°C ~ 175°C (TJ)
AUIRL3705Z MOSFET N-CH 55V 75A TO220AB International Rectifier	750	-	询价单	数据表	HEXFET®	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	4.5V, 10V	8mOhm @ 52A, 10V	Through Hole	3V @ 250µA	60 nC @ 5 V	55 V	±16V	2880 pF @ 25 V	-	-	TO-220AB	-	130W (Tc)	-55°C ~ 175°C (TJ)
IRF6613TRPBF IRF6613 - 12V-300V N-CHANNEL POW International Rectifier	22,143	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MT	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	23A (Ta), 150A (Tc)	4.5V, 10V	3.4mOhm @ 23A, 10V	Surface Mount	2.25V @ 250µA	63 nC @ 4.5 V	40 V	±20V	5950 pF @ 15 V	-	-	DIRECTFET™ MT	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)

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