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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFAUIRF540Z

IRFAUIRF540Z

AUTOMOTIVE HEXFET N-CHANNEL POWE

International Rectifier

1,994 -
IRFAUIRF540Z

数据表

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 26.5mOhm @ 22A, 10V Through Hole 4V @ 250µA 63 nC @ 10 V 100 V ±20V 1770 pF @ 25 V AEC-Q101 - PG-TO220-3-904 Automotive 92W (Tc) -55°C ~ 175°C (TJ)
AUIRF1405

AUIRF1405

MOSFET N-CH 55V 75A TO220AB

International Rectifier

950 -
AUIRF1405

数据表

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) - 5.3mOhm @ 101A, 10V Through Hole 4V @ 250µA 260 nC @ 10 V 55 V ±20V 5480 pF @ 25 V - - TO-220AB - 330W (Tc) -55°C ~ 175°C (TJ)
AUIRFSL3206

AUIRFSL3206

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

250 -
AUIRFSL3206

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 120A (Tc) - 3mOhm @ 75A, 10V Through Hole 4V @ 150µA 170 nC @ 10 V 60 V - 6540 pF @ 50 V - - TO-262 - 300W (Tc) -55°C ~ 175°C (TJ)
AUIRL1404S

AUIRL1404S

PFET, 160A I(D), 40V, 0.004OHM,

International Rectifier

2,225 -
AUIRL1404S

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V Surface Mount 3V @ 250µA 140 nC @ 5 V 40 V ±20V 6600 pF @ 25 V - - TO-252AA (DPAK) - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
AUIRF3808

AUIRF3808

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

1,792 -
AUIRF3808

数据表

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 140A (Tc) - 7mOhm @ 82A, 10V Through Hole 4V @ 250µA 220 nC @ 10 V 75 V - 5310 pF @ 25 V - - TO-220AB - 330W (Tc) -55°C ~ 175°C (TJ)
AUIRF2805

AUIRF2805

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

1,300 -
AUIRF2805

数据表

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4.7mOhm @ 104A, 10V Through Hole 4V @ 250µA 230 nC @ 10 V 55 V ±20V 5110 pF @ 25 V - - TO-220AB - 330W (Tc) -55°C ~ 175°C (TJ)
IRF6641TRPBF

IRF6641TRPBF

IRF6641 - 12V-300V N-CHANNEL POW

International Rectifier

420 -
IRF6641TRPBF

数据表

HEXFET® DirectFET™ Isometric MZ Bulk Active N-Channel MOSFET (Metal Oxide) 4.6A (Ta), 26A (Tc) 10V 59.9mOhm @ 5.5A, 10V Surface Mount 4.9V @ 150µA 48 nC @ 10 V 200 V ±20V 2290 pF @ 25 V - - DIRECTFET™ MZ - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
AUIRFS3607

AUIRFS3607

MOSFET N-CH 75V 80A D2PAK

International Rectifier

408 -
AUIRFS3607

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 9mOhm @ 46A, 10V Surface Mount 4V @ 100µA 84 nC @ 10 V 75 V ±20V 3070 pF @ 50 V - - PG-TO263-3 - 140W (Tc) -55°C ~ 175°C (TJ)
IRFF9221

IRFF9221

MOSFET N-CH 150V 2.5A TO205AF

International Rectifier

194 -
IRFF9221

数据表

HEXFET® TO-205AF Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 2.5A (Tc) - - Through Hole - - 150 V - - - - TO-205AF (TO-39) - 20W -
AUIRF1324S

AUIRF1324S

MOSFET N-CH 24V 195A D2PAK

International Rectifier

6,266 -
AUIRF1324S

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 195A (Tc) 10V 1.65mOhm @ 195A, 10V Surface Mount 4V @ 250µA 240 nC @ 10 V 24 V ±20V 7590 pF @ 24 V - - D2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
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