Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 9

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPP77N06S212AKSA2 MOSFET N-CH 55V 77A TO220-3 Infineon Technologies	495	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	77A (Tc)	10V	12mOhm @ 38A, 10V	Through Hole	4V @ 93µA	60 nC @ 10 V	55 V	±20V	1770 pF @ 25 V	-	-	PG-TO220-3-1	-	158W (Tc)	-55°C ~ 175°C (TJ)
IPB11N03LA MOSFET N-CH 25V 30A TO263-3 Infineon Technologies	9,184	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	11.2mOhm @ 30A, 10V	Surface Mount	2V @ 20µA	11 nC @ 5 V	25 V	±20V	1358 pF @ 15 V	-	-	PG-TO263-3-2	-	52W (Tc)	-55°C ~ 175°C (TJ)
SPN02N60S5 MOSFET N-CH 600V 400MA SOT223-4 Infineon Technologies	2,514	-	询价单	数据表	CoolMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	400mA (Ta)	10V	3Ohm @ 1.1A, 10V	Surface Mount	5.5V @ 80µA	7.4 nC @ 10 V	600 V	±20V	250 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
IAUA250N04S6N008AUMA1 OPTIMOS POWER MOSFET Infineon Technologies	1,950	-	询价单	数据表	OptiMOS™ 6	5-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	51A (Ta)	7V, 10V	0.8mOhm @ 100A, 10V	Surface Mount	3V @ 90µA	109 nC @ 10 V	40 V	±20V	7088 pF @ 25 V	AEC-Q101	-	PG-HSOF-5-1	Automotive	172W (Tc)	-55°C ~ 175°C (TJ)
IPB160N04S4H1ATMA1 MOSFET N-CH 40V 160A TO263-7 Infineon Technologies	770	-	询价单	数据表	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Tc)	10V	1.6mOhm @ 100A, 10V	Surface Mount	4V @ 110µA	137 nC @ 10 V	40 V	±20V	10920 pF @ 25 V	-	-	PG-TO263-7-3	-	167W (Tc)	-55°C ~ 175°C (TJ)
IPA057N08N3GXKSA1 MOSFET N-CH 80V 60A TO220-FP Infineon Technologies	440	-	询价单	数据表	OptiMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	6V, 10V	5.7mOhm @ 60A, 10V	Through Hole	3.5V @ 90µA	69 nC @ 10 V	80 V	±20V	4750 pF @ 40 V	-	-	PG-TO220-FP	-	39W (Tc)	-55°C ~ 175°C (TJ)
IPS70R360P7SAKMA1 MOSFET N-CH 700V 12.5A TO251-3 Infineon Technologies	2,551	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	12.5A (Tc)	10V	360mOhm @ 3A, 10V	Through Hole	3.5V @ 150µA	16.4 nC @ 10 V	700 V	±16V	517 pF @ 400 V	-	-	PG-TO251-3	-	59.5W (Tc)	-40°C ~ 150°C (TJ)
IPF016N06NF2SATMA1 TRENCH 40<-<100V Infineon Technologies	989	-	询价单	数据表	StrongIRFET™2	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Ta), 223A (Tc)	6V, 10V	1.7mOhm @ 100A, 10V	Surface Mount	3.3V @ 129µA	162 nC @ 10 V	60 V	±20V	7300 pF @ 30 V	-	-	PG-TO263-7-U02	-	3.8W (Ta), 188W (Tc)	-55°C ~ 175°C (TJ)
IRFR120NCTRLPBF MOSFET N-CH 100V 9.4A DPAK Infineon Technologies	4,879	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.4A (Ta)	10V	210mOhm @ 5.6A, 10V	Surface Mount	4V @ 250µA	25 nC @ 10 V	100 V	±20V	330 pF @ 25 V	-	-	TO-252AA (DPAK)	-	48W (Tc)	-55°C ~ 175°C (TJ)
IPA70R900P7SXKSA1 MOSFET N-CH 700V 6A TO220 Infineon Technologies	5,265	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	900mOhm @ 1.1A, 10V	Through Hole	3.5V @ 60µA	6.8 nC @ 400 V	700 V	±16V	211 pF @ 400 V	-	-	PG-TO220-FP	-	20.5W (Tc)	-40°C ~ 150°C (TJ)

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