Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 11

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPA60R125CFD7XKSA1 MOSFET N-CH 600V 11A TO220 Infineon Technologies	729	-	询价单	数据表	OptiMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	125mOhm @ 7.8A, 10V	Through Hole	4.5V @ 390µA	36 nC @ 10 V	600 V	±20V	1503 pF @ 400 V	-	-	PG-TO220 Full Pack	-	32W (Tc)	-55°C ~ 150°C (TJ)
IPP60R210CFD7XKSA1 MOSFET N CH Infineon Technologies	435	-	询价单	数据表	CoolMOS™ CFD7	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	210mOhm @ 4.9A, 10V	Through Hole	4.5V @ 240µA	23 nC @ 10 V	600 V	±20V	1015 pF @ 400 V	-	-	PG-TO220-3	-	64W (Tc)	-55°C ~ 150°C (TJ)
IPA60R180C7XKSA1 MOSFET N-CH 600V 9A TO220-FP Infineon Technologies	203	-	询价单	数据表	CoolMOS™ C7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	180mOhm @ 5.3A, 10V	Through Hole	4V @ 260µA	24 nC @ 10 V	600 V	±20V	1080 pF @ 400 V	-	-	PG-TO220 Full Pack	-	29W (Tc)	-55°C ~ 150°C (TJ)
IPF013N04NF2SATMA1 TRENCH <= 40V Infineon Technologies	800	-	询价单	数据表	StrongIRFET™2	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta), 232A (Tc)	6V, 10V	1.35mOhm @ 100A, 10V	Surface Mount	3.4V @ 126µA	159 nC @ 10 V	40 V	±20V	7500 pF @ 20 V	-	-	PG-TO263-7-U02	-	3.8W (Ta), 188W (Tc)	-55°C ~ 175°C (TJ)
IRF5802 MOSFET N-CH 150V 900MA MICRO6 Infineon Technologies	8,937	-	询价单	数据表	HEXFET®	SOT-23-6 Thin, TSOT-23-6	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900mA (Ta)	10V	1.2Ohm @ 540mA, 10V	Surface Mount	5.5V @ 250µA	6.8 nC @ 10 V	150 V	±30V	88 pF @ 25 V	-	-	Micro6™(TSOP-6)	-	2W (Ta)	-
IPD65R1K4CFDATMA2 MOSFET N-CH 650V 2.8A TO252-3 Infineon Technologies	7,773	-	询价单	数据表	CoolMOS™ CFD2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.8A (Tc)	10V	1.4Ohm @ 1A, 10V	Surface Mount	4.5V @ 100µA	10 nC @ 10 V	650 V	±20V	262 pF @ 100 V	-	-	PG-TO252-3	-	28.4W (Tc)	-55°C ~ 150°C (TJ)
IPP080N03L G MOSFET N-CH 30V 50A TO220-3 Infineon Technologies	2,776	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	8mOhm @ 30A, 10V	Through Hole	2.2V @ 250µA	18 nC @ 10 V	30 V	±20V	1900 pF @ 15 V	-	-	PG-TO220-3-1	-	47W (Tc)	-55°C ~ 175°C (TJ)
ISK036N03LM5AULA1 TRENCH <= 40V PG-VSON-6 Infineon Technologies	3,818	-	询价单	数据表	OptiMOS™ 5	6-PowerVDFN	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	44A (Tc)	4.5V, 10V	3.6mOhm @ 20A, 10V	Surface Mount	2V @ 250µA	21.5 nC @ 10 V	30 V	±16V	1400 pF @ 15 V	-	-	PG-VSON-6-1	-	11W (Tc)	-55°C ~ 150°C (TJ)
IPT039N15N5XTMA1 TRENCH >=100V PG-HSOF-8 Infineon Technologies	3,173	-	询价单	数据表	OptiMOS™	8-PowerSFN	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	190A (Tc)	8V, 10V	3.9mOhm @ 50A, 10V	Surface Mount	4.6V @ 257µA	98 nC @ 10 V	150 V	±20V	7700 pF @ 75 V	-	-	PG-HSOF-8	-	319W (Tc)	-55°C ~ 175°C (TJ)
IAUS300N04S4N007ATMA1 MOSFET_(20V 40V) PG-HSOG-8 Infineon Technologies	2,411	-	询价单	数据表	OptiMOS™	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	300A (Tc)	10V	0.74mOhm @ 100A, 10V	Surface Mount	4V @ 275µA	342 nC @ 10 V	40 V	±20V	27356 pF @ 25 V	-	-	PG-HSOG-8-1	-	375W (Tc)	-55°C ~ 175°C (TJ)

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