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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7805ZTRPBF-1MOSFET N-CH 30V 16A 8SO Infineon Technologies |
6,229 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Ta) | 4.5V, 10V | 6.8mOhm @ 16A, 10V | Surface Mount | 2.25V @ 250µA | 27 nC @ 4.5 V | 30 V | ±20V | 2080 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF8714TRPBF-1MOSFET N-CH 30V 14A 8SO Infineon Technologies |
5,243 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | Surface Mount | 2.35V @ 25µA | 12 nC @ 4.5 V | 30 V | ±20V | 1020 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRLR3717TRLPBFMOSFET N-CH 20V 120A DPAK Infineon Technologies |
3,979 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 4.5V, 10V | 4mOhm @ 15A, 10V | Surface Mount | 2.45V @ 250µA | 31 nC @ 4.5 V | 20 V | ±20V | 2830 pF @ 10 V | - | - | TO-252AA (DPAK) | - | 89W (Tc) | -55°C ~ 175°C (TJ) |
|
IPD60R460CEAUMA1CONSUMER Infineon Technologies |
7,956 | - |
|
数据表 |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13.1A (Tj) | 10V | 460mOhm @ 3.4A, 10V | Surface Mount | 3.5V @ 280µA | 28 nC @ 10 V | 600 V | ±20V | 620 pF @ 100 V | - | - | PG-TO252-3-344 | - | 74W | -40°C ~ 150°C (TJ) |
|
BSS205NL6327HTSA1MOSFET N-CH 20V 2.5A SOT23-3 Infineon Technologies |
3,719 | - |
|
数据表 |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.5A (Ta) | 2.5V, 4.5V | 50mOhm @ 2.5A, 4.5V | Surface Mount | 1.2V @ 11µA | 3.2 nC @ 4.5 V | 20 V | ±12V | 419 pF @ 10 V | - | - | PG-SOT23 | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
|
IPP60R380P6POWER FIELD-EFFECT TRANSISTOR Infineon Technologies |
9,589 | - |
|
数据表 |
CoolMOS™ P6 | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 10.6A (Tc) | - | - | Through Hole | - | - | - | - | - | - | - | PG-TO220-3 | - | - | -55°C ~ 150°C (TJ) |
|
IRFC7314BMOSFET P-CH 20V 5.3A 8-SOIC Infineon Technologies |
2,134 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | ±12V | - | - | - | - | - | - | - |
|
|
IRF7416TRPBF-1MOSFET P-CH 30V 10A 8SO Infineon Technologies |
3,262 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 10A (Ta) | - | 20mOhm @ 5.6A, 10V | Surface Mount | 2.04V @ 250µA | 92 nC @ 10 V | 30 V | ±20V | 1700 pF @ 25 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRLML2803TRPBF-1MOSFET N-CH 30V 1.2A SOT23 Infineon Technologies |
7,907 | - |
|
数据表 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.2A (Ta) | - | 250mOhm @ 910mA, 10V | Surface Mount | 1V @ 250µA | 5 nC @ 10 V | 30 V | ±20V | 85 pF @ 25 V | - | - | Micro3™/SOT-23 | - | 540mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF7410TRPBF-1MOSFET P-CH 12V 16A 8SO Infineon Technologies |
3,751 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 16A (Ta) | - | 7mOhm @ 16A, 4.5V | Surface Mount | 900mV @ 250µA | 91 nC @ 4.5 V | 12 V | ±8V | 8676 pF @ 10 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
