Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 7

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AUIRFSL4010-313 MOSFET N-CH 100V 180A TO262 Infineon Technologies	8,751	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	4.7mOhm @ 106A, 10V	Through Hole	4V @ 250µA	215 nC @ 10 V	100 V	±20V	9575 pF @ 50 V	AEC-Q101	-	TO-262	Automotive	375W (Tc)	-55°C ~ 175°C (TJ)
SPD30N03S2L10T MOSFET N-CH 30V 30A TO252-3 Infineon Technologies	6,802	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	10mOhm @ 30A, 10V	Surface Mount	2V @ 50µA	41.8 nC @ 10 V	30 V	±20V	1550 pF @ 25 V	-	-	PG-TO252-3-11	-	100W (Tc)	-55°C ~ 175°C (TJ)
AUIRF7647S2TR MOSFET N-CH 100V 5.9A DIRECTFET Infineon Technologies	3,147	-	询价单	数据表	HEXFET®	DirectFET™ Isometric SC	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5.9A (Ta), 24A (Tc)	10V	31mOhm @ 14A, 10V	Surface Mount	5V @ 50µA	21 nC @ 10 V	100 V	±20V	910 pF @ 25 V	-	-	DIRECTFET™ SC	-	2.5W (Ta), 41W (Tc)	-55°C ~ 175°C (TJ)
IRFL1006TR MOSFET N-CH 60V 1.6A SOT223 Infineon Technologies	3,732	-	询价单	数据表	HEXFET®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.6A (Ta)	10V	220mOhm @ 1.6A, 10V	Surface Mount	4V @ 250µA	8 nC @ 10 V	60 V	±20V	160 pF @ 25 V	-	-	SOT-223	-	1W (Ta)	-55°C ~ 150°C (TJ)
AUIRFR3806TRL MOSFET N-CH 60V 43A DPAK Infineon Technologies	6,519	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	10V	15.8mOhm @ 25A, 10V	Surface Mount	4V @ 50µA	30 nC @ 10 V	60 V	±20V	1150 pF @ 50 V	-	-	TO-252AA (DPAK)	-	71W (Tc)	-55°C ~ 175°C (TJ)
AUIRFR8403TRL MOSFET N-CH 40V 100A DPAK Infineon Technologies	2,457	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.1mOhm @ 76A, 10V	Surface Mount	3.9V @ 100µA	99 nC @ 10 V	40 V	±20V	3171 pF @ 25 V	-	-	TO-252AA (DPAK)	-	99W (Tc)	-55°C ~ 175°C (TJ)
IPB049N08N5ATMA1 MOSFET N-CH 80V 80A D2PAK Infineon Technologies	1,834	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	6V, 10V	4.9mOhm @ 80A, 10V	Surface Mount	3.8V @ 66µA	53 nC @ 10 V	80 V	±20V	3770 pF @ 40 V	-	-	PG-TO263-3	-	125W (Tc)	-55°C ~ 175°C (TJ)
IPF042N10NF2SATMA1 MOSFET Infineon Technologies	281	-	询价单	数据表	StrongIRFET™ 2	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	21A (Ta), 139A (Tc)	6V, 10V	4.25mOhm @ 80A, 10V	Surface Mount	3.8V @ 93µA	85 nC @ 10 V	100 V	±20V	4000 pF @ 50 V	-	-	PG-TO263-7	-	3.8W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)
IPB026N06NATMA1 MOSFET N-CH 60V 25A/100A D2PAK Infineon Technologies	2,911	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25A (Ta), 100A (Tc)	6V, 10V	2.6mOhm @ 100A, 10V	Surface Mount	2.8V @ 75µA	56 nC @ 10 V	60 V	±20V	4100 pF @ 30 V	-	-	PG-TO263-3	-	3W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)
IPI90N04S402AKSA1 MOSFET N-CH 40V 90A TO262-3 Infineon Technologies	439	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	2.5mOhm @ 90A, 10V	Through Hole	4V @ 95µA	118 nC @ 10 V	40 V	±20V	9430 pF @ 25 V	-	-	PG-TO262-3	-	150W (Tc)	-55°C ~ 175°C (TJ)

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