订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPI10N10MOSFET N-CH 100V 10.3A TO262-3 Infineon Technologies |
6,908 | - |
|
数据表 |
SIPMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 10.3A (Tc) | 10V | 170mOhm @ 7.8A, 10V | Through Hole | 4V @ 21µA | 19.4 nC @ 10 V | 100 V | ±20V | 426 pF @ 25 V | - | - | PG-TO262-3-1 | - | 50W (Tc) | -55°C ~ 175°C (TJ) |
|
IPS80R1K4P7AKMA1MOSFET N-CH 800V 4A TO251-3 Infineon Technologies |
2,739 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | Through Hole | 3.5V @ 700µA | 10 nC @ 10 V | 800 V | ±20V | - | - | - | PG-TO251-3-11 | - | 32W (Tc) | -55°C ~ 150°C (TJ) |
|
IPA60R1K5CEXKSA1MOSFET N-CH 600V 5A TO220 Infineon Technologies |
9,220 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | Through Hole | 3.5V @ 90µA | 9.4 nC @ 10 V | 600 V | ±20V | 200 pF @ 100 V | - | - | PG-TO220-FP | - | 20W (Tc) | -40°C ~ 150°C (TJ) |
|
IRFZ44ZPBFMOSFET N-CH 55V 51A TO220AB Infineon Technologies |
5,762 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | Through Hole | 4V @ 250µA | 43 nC @ 10 V | 55 V | ±20V | 1420 pF @ 25 V | - | - | TO-220AB | - | 80W (Tc) | -55°C ~ 175°C (TJ) |
|
AUXNS0306RTRLMOSFET N-CH DPAK Infineon Technologies |
2,478 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPB120N04S402ATMA1MOSFET N-CH 40V 120A D2PAK Infineon Technologies |
3,008 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 1.8mOhm @ 100A, 10V | Surface Mount | 4V @ 110µA | 134 nC @ 10 V | 40 V | ±20V | 10740 pF @ 25 V | - | - | PG-TO263-3 | - | 158W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IQE065N10NM5CGATMA1TRENCH >=100V PG-TTFN-9 Infineon Technologies |
9,915 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Ta), 85A (Tc) | 6V, 10V | 6.5mOhm @ 20A, 10V | Surface Mount | 3.8V @ 48µA | 42 nC @ 10 V | 100 V | ±20V | 3000 pF @ 50 V | - | - | PG-TTFN-9-1 | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
|
BSF045N03MQ3 GMOSFET N-CH 30V 18A/63A 2WDSON Infineon Technologies |
8,507 | - |
|
数据表 |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 18A (Ta), 63A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | Surface Mount | 2.2V @ 250µA | 34 nC @ 10 V | 30 V | ±20V | 2600 pF @ 15 V | - | - | MG-WDSON-2, CanPAK M™ | - | - | -40°C ~ 150°C (TJ) |
|
IRLR7833TRLPBFMOSFET N-CH 30V 140A DPAK Infineon Technologies |
3,059 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | Surface Mount | 2.3V @ 250µA | 50 nC @ 4.5 V | 30 V | ±20V | 4010 pF @ 15 V | - | - | TO-252AA (DPAK) | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFR4105ZTRRPBFMOSFET N-CH 55V 30A DPAK Infineon Technologies |
3,776 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | Surface Mount | 4V @ 250µA | 27 nC @ 10 V | 55 V | ±20V | 740 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 48W (Tc) | -55°C ~ 175°C (TJ) |
