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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPF09N03LAMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
8,792 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 8.6mOhm @ 30A, 10V | Surface Mount | 2V @ 20µA | 13 nC @ 5 V | 25 V | ±20V | 1642 pF @ 15 V | - | - | PG-TO252-3-23 | - | 63W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPF09N03LA GMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
2,607 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 8.6mOhm @ 30A, 10V | Surface Mount | 2V @ 20µA | 13 nC @ 5 V | 25 V | ±20V | 1642 pF @ 15 V | - | - | PG-TO252-3-23 | - | 63W (Tc) | -55°C ~ 175°C (TJ) |
|
BSF083N03LQ GMOSFET N-CH 30V 13A/53A 2WDSON Infineon Technologies |
3,414 | - |
|
数据表 |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Ta), 53A (Tc) | 4.5V, 10V | 8.3mOhm @ 20A, 10V | Surface Mount | 2.2V @ 250µA | 18 nC @ 10 V | 30 V | ±20V | 1800 pF @ 15 V | - | - | MG-WDSON-2, CanPAK M™ | - | 2.2W (Ta), 36W (Tc) | -40°C ~ 150°C (TJ) |
|
AUXNSF2804STRL7PMOSFET N-CH Infineon Technologies |
9,055 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IGT40R070D1ATMA1GAN HV Infineon Technologies |
2,653 | - |
|
数据表 |
CoolGaN™ | 8-PowerSFN | Bulk | Discontinued at Digi-Key | N-Channel | GaNFET (Gallium Nitride) | 31A (Tc) | - | - | Surface Mount | 1.6V @ 2.6mA | - | 400 V | -10V | 382 pF @ 320 V | - | - | PG-HSOF-8-3 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IGOT60R070D1E8220AUMA1GAN HV Infineon Technologies |
9,087 | - |
|
数据表 |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Bulk | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 31A (Tc) | - | - | Surface Mount | 1.6V @ 2.6mA | - | 600 V | -10V | 380 pF @ 400 V | - | - | PG-DSO-20-87 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IGT60R070D1E8220ATMA1GAN HV Infineon Technologies |
3,479 | - |
|
数据表 |
CoolGaN™ | 8-PowerSFN | Bulk | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 31A (Tc) | - | - | Surface Mount | 1.6V @ 2.6mA | - | 600 V | -10V | 380 pF @ 400 V | - | - | PG-HSOF-8-3 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IGO60R070D1E8220AUMA1GAN HV Infineon Technologies |
4,134 | - |
|
数据表 |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Bulk | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 31A (Tc) | - | - | Surface Mount | 1.6V @ 2.6mA | - | 600 V | -10V | 380 pF @ 400 V | - | - | PG-DSO-20-85 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPD95R450PFD7ATMA1MOSFET N-CH 950V 13.3A TO252-3 Infineon Technologies |
2,466 | - |
|
数据表 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13.3A (Tc) | 10V | 450mOhm @ 7.2A, 10V | Surface Mount | 3.5V @ 360µA | 43 nC @ 10 V | 950 V | ±20V | 1230 pF @ 400 V | - | - | PG-TO252-3 | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
BSC011N03LSTATMA1MOSFET N-CH 30V 39A/100A TDSON Infineon Technologies |
5,000 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 39A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | Surface Mount | 2V @ 250µA | 48 nC @ 4.5 V | 30 V | ±20V | 6300 pF @ 15 V | - | - | PG-TDSON-8 FL | - | 3W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) |
