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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPL60R285P7AUMA1MOSFET N-CH 600V 13A 4VSON Infineon Technologies |
5,930 | - |
|
数据表 |
CoolMOS™ P7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 285mOhm @ 3.8A, 10V | Surface Mount | 4V @ 190µA | 18 nC @ 10 V | 600 V | ±20V | 761 pF @ 400 V | - | - | PG-VSON-4 | - | 59W (Tc) | -40°C ~ 150°C (TJ) |
|
IPF10N03LA GMOSFET N-CH 25V 30A TO252-3 Infineon Technologies |
6,350 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 10.4mOhm @ 30A, 10V | Surface Mount | 2V @ 20µA | 11 nC @ 5 V | 25 V | ±20V | 1358 pF @ 15 V | - | - | PG-TO252-3-23 | - | 52W (Tc) | -55°C ~ 175°C (TJ) |
|
IPU78CN10N GMOSFET N-CH 100V 13A TO251-3 Infineon Technologies |
4,231 | - |
|
数据表 |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 78mOhm @ 13A, 10V | Through Hole | 4V @ 12µA | 11 nC @ 10 V | 100 V | ±20V | 716 pF @ 50 V | - | - | PG-TO251-3 | - | 31W (Tc) | -55°C ~ 175°C (TJ) |
|
IPC045N10N3X1SA1MOSFET N-CH 100V 1A SAWN ON FOIL Infineon Technologies |
6,259 | - |
|
数据表 |
OptiMOS™ | Die | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | Surface Mount | 3.5V @ 33µA | - | 100 V | - | - | - | - | Sawn on foil | - | - | - |
|
IRF5804MOSFET P-CH 40V 2.5A MICRO6 Infineon Technologies |
8,752 | - |
|
数据表 |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.5A (Ta) | 4.5V, 10V | 198mOhm @ 2.5A, 10V | Surface Mount | 3V @ 250µA | 21 nC @ 10 V | 40 V | ±20V | 680 pF @ 25 V | - | - | Micro6™(TSOP-6) | - | 2W (Ta) | - |
|
IRF6623TRPBFMOSFET N-CH 20V 16A DIRECTFET Infineon Technologies |
8,465 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Ta), 55A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | Surface Mount | 2.2V @ 250µA | 17 nC @ 4.5 V | 20 V | ±20V | 1360 pF @ 10 V | - | - | DIRECTFET™ ST | - | 1.4W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) |
|
|
64-4095PBFMOSFET N-CH SMD D2PAK Infineon Technologies |
9,941 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPF050N10NF2SATMA1MOSFET Infineon Technologies |
1,311 | - |
|
数据表 |
StrongIRFET™ 2 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Ta), 117A (Tc) | 6V, 10V | 5.05mOhm @ 60A, 10V | Surface Mount | 3.8V @ 84µA | 76 nC @ 10 V | 100 V | ±20V | 3600 pF @ 50 V | - | - | PG-TO263-7 | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF2804L-313MOSFET N-CH 40V 195A TO262 Infineon Technologies |
4,448 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 2.3mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 240 nC @ 10 V | 40 V | ±20V | 6450 pF @ 25 V | AEC-Q101 | - | TO-262 | Automotive | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFSL4010-306MOSFET N-CH 100V 180A TO262 Infineon Technologies |
6,419 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | Through Hole | 4V @ 250µA | 215 nC @ 10 V | 100 V | ±20V | 9575 pF @ 50 V | AEC-Q101 | - | TO-262 | Automotive | 375W (Tc) | -55°C ~ 175°C (TJ) |
