Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 79

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFZ48NSTRRPBF MOSFET N-CH 55V 64A D2PAK Infineon Technologies	9,031	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	64A (Tc)	10V	14mOhm @ 32A, 10V	Surface Mount	4V @ 250µA	81 nC @ 10 V	55 V	±20V	1970 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 130W (Tc)	-55°C ~ 175°C (TJ)
IRF7706 MOSFET P-CH 30V 7A 8TSSOP Infineon Technologies	7,281	-	询价单	数据表	HEXFET®	8-TSSOP (0.173", 4.40mm Width)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	7A (Ta)	4.5V, 10V	22mOhm @ 7A, 10V	Surface Mount	2.5V @ 250µA	72 nC @ 10 V	30 V	±20V	2211 pF @ 25 V	-	-	8-TSSOP	-	1.51W (Ta)	-55°C ~ 150°C (TJ)
IRF7401TRPBF MOSFET N-CH 20V 8.7A 8SO Infineon Technologies	6,636	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.7A (Ta)	2.7V, 4.5V	22mOhm @ 4.1A, 4.5V	Surface Mount	700mV @ 250µA (Min)	48 nC @ 4.5 V	20 V	±12V	1600 pF @ 15 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRLR3714TRPBF MOSFET N-CH 20V 36A DPAK Infineon Technologies	5,801	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	36A (Tc)	4.5V, 10V	20mOhm @ 18A, 10V	Surface Mount	3V @ 250µA	9.7 nC @ 4.5 V	20 V	±20V	670 pF @ 10 V	-	-	TO-252AA (DPAK)	-	47W (Tc)	-55°C ~ 175°C (TJ)
BSP295L6327HTSA1 MOSFET N-CH 60V 1.8A SOT223-4 Infineon Technologies	8,080	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.8A (Ta)	4.5V, 10V	300mOhm @ 1.8A, 10V	Surface Mount	1.8V @ 400µA	17 nC @ 10 V	60 V	±20V	368 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP296L6327HTSA1 MOSFET N-CH 100V 1.1A SOT223-4 Infineon Technologies	9,110	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.1A (Ta)	4.5V, 10V	700mOhm @ 1.1A, 10V	Surface Mount	1.8V @ 400µA	17.2 nC @ 10 V	100 V	±20V	364 pF @ 25 V	-	-	PG-SOT223-4	-	1.79W (Ta)	-55°C ~ 150°C (TJ)
BSP373L6327HTSA1 MOSFET N-CH 100V 1.7A SOT223-4 Infineon Technologies	3,310	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.7A (Ta)	10V	300mOhm @ 1.7A, 10V	Surface Mount	4V @ 1mA	-	100 V	±20V	550 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
IPD25CN10NGBUMA1 MOSFET N-CH 100V 35A TO252-3 Infineon Technologies	8,917	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	25mOhm @ 35A, 10V	Surface Mount	4V @ 39µA	31 nC @ 10 V	100 V	±20V	2070 pF @ 50 V	-	-	PG-TO252-3	-	71W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S2L11ATMA2 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	863	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	10.7mOhm @ 40A, 10V	Surface Mount	2V @ 93µA	80 nC @ 10 V	55 V	±20V	2075 pF @ 25 V	-	-	PG-TO263-3-2	-	158W (Tc)	-55°C ~ 175°C (TJ)
IPD65R420CFDAATMA1 MOSFET N-CH 650V 8.7A TO252-3 Infineon Technologies	2,178	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8.7A (Tc)	10V	420mOhm @ 3.4A, 10V	Surface Mount	4.5V @ 345µA	32 nC @ 10 V	650 V	±20V	870 pF @ 100 V	AEC-Q101	-	PG-TO252-3	Automotive	83.3W (Tc)	-40°C ~ 150°C (TJ)

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