Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 80

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF7821GTRPBF MOSFET N-CH 30V 13.6A 8SO Infineon Technologies	8,346	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13.6A (Ta)	4.5V, 10V	9.1mOhm @ 13A, 10V	Surface Mount	1V @ 250µA	14 nC @ 4.5 V	30 V	±20V	1010 pF @ 15 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 155°C (TJ)
IPA040N06NXKSA1 MOSFET N-CH 60V 69A TO220-FP Infineon Technologies	420	-	询价单	数据表	OptiMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	69A (Tc)	6V, 10V	4mOhm @ 69A, 10V	Through Hole	3.3V @ 50µA	44 nC @ 10 V	60 V	±20V	3375 pF @ 30 V	-	-	PG-TO220-FP	-	36W (Tc)	-55°C ~ 175°C (TJ)
IPD033N06NATMA1 MOSFET N-CH 60V 90A TO252-3 Infineon Technologies	2,063	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	6V, 10V	3.3mOhm @ 90A, 10V	Surface Mount	3.3V @ 50µA	44 nC @ 10 V	60 V	±20V	3400 pF @ 30 V	-	-	PG-TO252-3	-	107W (Tc)	-55°C ~ 175°C (TJ)
IRFHM4231TRPBF MOSFET N-CH 25V 40A 8PQFN Infineon Technologies	5,792	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	3.4mOhm @ 30A, 10V	Surface Mount	2.1V @ 35µA	20 nC @ 10 V	25 V	±20V	1270 pF @ 13 V	-	-	8-PQFN (3x3)	-	2.7W (Ta), 29W (Tc)	-55°C ~ 150°C (TJ)
ISZ0501NLSATMA1 25V, N-CH MOSFET, LOGIC LEVEL, P Infineon Technologies	6,293	-	询价单	数据表	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	3.9mOhm @ 20A, 10V	Surface Mount	2V @ 250µA	13.6 nC @ 10 V	25 V	±16V	910 pF @ 12 V	-	-	PG-TDSON-8-25	-	30W (Tc)	-55°C ~ 150°C (TJ)
IRFR5410TR MOSFET P-CH 100V 13A DPAK Infineon Technologies	5,251	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	205mOhm @ 7.8A, 10V	Surface Mount	4V @ 250µA	58 nC @ 10 V	100 V	±20V	760 pF @ 25 V	-	-	TO-252AA (DPAK)	-	66W (Tc)	-55°C ~ 150°C (TJ)
BSC019N02KSGAUMA1 MOSFET N-CH 20V 30A/100A TDSON Infineon Technologies	5,287	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Ta), 100A (Tc)	2.5V, 4.5V	1.95mOhm @ 50A, 4.5V	Surface Mount	1.2V @ 350µA	85 nC @ 4.5 V	20 V	±12V	13000 pF @ 10 V	-	-	PG-TDSON-8-1	-	2.8W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)
IPA90R1K2C3XKSA2 MOSFET N-CH 900V 5.1A TO220 Infineon Technologies	9,553	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.1A (Tc)	10V	1.2Ohm @ 2.8A, 10V	Through Hole	3.5V @ 310µA	28 nC @ 10 V	900 V	±20V	710 pF @ 100 V	-	-	PG-TO220-FP	-	31W (Tc)	-55°C ~ 150°C (TJ)
IPT60R180CM8XTMA1 IPT60R180CM8XTMA1 Infineon Technologies	1,905	-	询价单	数据表	CoolMOS™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tj)	10V	180mOhm @ 5.6A, 10V	Surface Mount	4.7V @ 140µA	17 nC @ 10 V	600 V	±20V	743 pF @ 400 V	-	-	PG-HSOF-8-2	-	119W (Tc)	-55°C ~ 150°C (TJ)
SPB80N06S2-09 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	9,931	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	9.1mOhm @ 50A, 10V	Surface Mount	4V @ 125µA	80 nC @ 10 V	55 V	±20V	3140 pF @ 25 V	-	-	PG-TO263-3-2	-	190W (Tc)	-55°C ~ 175°C (TJ)

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